Method of forming pattern

Abstract

Provided is a method of forming pattern including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing a first organic solvent, wherein in the developer, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less.

What is claimed is: 
     
         1 . A developer containing an organic solvent, wherein particles each having a diameter of 0.3 μm or greater are contained in a density of 30 particles/ml or less. 
     
     
         2 . The developer according to  claim 1 , wherein the organic solvent contained in the developer is one having been passed through a filter with pore size of 0.1 μm or less. 
     
     
         3 . The developer according to  claim 1 , wherein the organic solvent contained in the developer is one filled in a storage container in an environment whose cleanliness defined in US Federal Standard 209E is class 10,000 or below. 
     
     
         4 . The developer according to  claim 1 , wherein the organic solvent contained in the developer is filled in a storage container having been rinsed with the organic solvent and dried. 
     
     
         5 . The developer according to  claim 1 , wherein the organic solvent contained in the developer is one having been subjected to a distilling operation. 
     
     
         6 . The developer according to  claim 1 , wherein the developer contains at least a butyl acetate as the organic solvent. 
     
     
         7 . The developer according to  claim 1 , wherein the developer contains at least a methyl amyl ketone as the organic solvent. 
     
     
         8 . The developer according to  claim 1 , wherein the content of organic solvent based on the developer is in the range of 90 to 100 mass %. 
     
     
         9 . A rinse liquid containing an organic solvent, wherein particles each having a diameter of 0.3 μm or greater are contained in a density of 30 particles/ml or less. 
     
     
         10 . The rinse liquid according to  claim 9 , wherein the organic solvent contained in the rinse liquid is one having been passed through a filter with pore size of 0.1 μm or less. 
     
     
         11 . The rinse liquid according to  claim 9 , wherein the organic solvent contained in the rinse liquid is one filled in a storage container in an environment whose cleanliness defined in US Federal Standard 209E is class 10,000 or below. 
     
     
         12 . The rinse liquid according to  claim 9 , wherein the organic solvent contained in the rinse liquid is filled in a storage container having been rinsed with the organic solvent and dried. 
     
     
         13 . The rinse liquid according to  claim 9 , wherein the organic solvent contained in the rinse liquid is one having been subjected to distilling operation. 
     
     
         14 . The rinse liquid according to  claim 9 , wherein the rinse liquid contains at least a 4-methyl-2-pentanol as the organic solvent. 
     
     
         15 . The rinse liquid according to  claim 9 , wherein the content of organic solvent based on the rinse liquid is in the range of 90 to 100 mass %. 
     
     
         16 . A method of producing a semiconductor device, comprising:
 (a) forming a chemically amplified resist composition into a film,   (b) exposing the film to light, and   (c) developing the exposed film with the developer of  claim 1 .   
     
     
         17 . A method of producing a semiconductor device, comprising:
 (a) forming a chemically amplified resist composition into a film,   (b) exposing the film to light,   (c) developing the exposed film with the developer of  claim 1 , and   (d) rinsing the developed film by a rinse liquid of  claim 9 .