Method of manufacturing solid-state imaging device, solid-state imaging device, and electronic apparatus

Abstract

A solid-state imaging device with (a) a substrate, (b) a plurality of photoelectric conversion elements carried on the substrate, (c) a respective plurality of color filters respectively overlying the photoelectric conversion elements, and (d) a mixed color prevention layer between the color filters, the mixed color prevention layer having a reflectivity higher than any of the those of the color filters or an index of refraction lower than that of any of those of the color filters.

What is claimed is: 
     
         1 . A solid-state imaging device, comprising:
 a substrate;   a plurality of photoelectric conversion elements carried on the substrate;   a respective plurality of color filters respectively overlying the photoelectric conversion elements; and   a mixed color prevention layer between the color filters, the mixed color prevention layer having a refractive index lower than any of the those of the color filters.   
     
     
         2 . The solid-state imaging device of  claim 1  further comprising an antireflection layer between the color filters. 
     
     
         3 . The solid-state imaging device of  claim 1  further comprising an antireflection layer between the color filters and overlain by the mixed color prevention layer. 
     
     
         4 . The solid-state imaging device of  claim 1 , wherein the color filters and photoelectric conversion elements are arranged in a Bayer pattern. 
     
     
         5 . The solid-state imaging device of  claim 1 , wherein the color filters and photoelectric conversion elements are arranged in a BGBW array. 
     
     
         6 . A solid-state imaging device, comprising:
 a substrate;   a plurality of photoelectric conversion elements carried on the substrate;   a respective plurality of color filters respectively overlying the photoelectric conversion elements; and   a mixed color prevention layer between the color filters, the reflectively of the mixed color prevention layer being higher than any of those of the color filters.   
     
     
         7 . The solid-state imaging device of  claim 6  further comprising an antireflection layer between the color filters. 
     
     
         8 . The solid-state imaging device of  claim 6  further comprising an antireflection layer between the color filters and overlain by the mixed color prevention layer. 
     
     
         9 . The solid-state imaging device of  claim 6 , wherein the color filters and photoelectric conversion elements are arranged in a Bayer pattern. 
     
     
         10 . The solid-state imaging device of  claim 6 , wherein the color filters and photoelectric conversion elements are arranged in a BGBW array. 
     
     
         11 . An electronic device, comprising:
 a solid-state imaging device;   an optical system configured to guide light to the solid-state imaging device; and   signal processing circuitry configured to process signals output by the solid-state imaging device,   wherein,
 the solid-state imaging device comprises (a) a substrate, (b) a plurality of photoelectric conversion elements carried on the substrate, (c) a respective plurality of color filters respectively overlying the photoelectric conversion elements, and (d) a mixed color prevention layer between the color filters, the mixed color prevention layer having a refractive index lower than any of the those of the color filters. 
   
     
     
         12 . The solid-state imaging device of  claim 11  further comprising an antireflection layer between the color filters. 
     
     
         13 . The solid-state imaging device of  claim 11  further comprising an antireflection layer between the color filters and overlain by the mixed color prevention layer. 
     
     
         14 . The solid-state imaging device of  claim 11 , wherein the color filters and photoelectric conversion elements are arranged in a Bayer pattern. 
     
     
         15 . The solid-state imaging device of  claim 11 , wherein the color filters and photoelectric conversion elements are arranged in a BGBW array. 
     
     
         16 . An electronic device, comprising:
 a solid-state imaging device;   an optical system configured to guide light to the solid-state imaging device; and   signal processing circuitry configured to process signals output by the solid-state imaging device,   wherein,
 the solid-state imaging device comprises (a) a substrate, (b) a plurality of photoelectric conversion elements carried on the substrate, (c) a respective plurality of color filters respectively overlying the photoelectric conversion elements, and (d) a mixed color prevention layer between the color filters, the mixed color prevention layer having a reflectivity higher than any of the those of the color filters. 
   
     
     
         17 . The solid-state imaging device of  claim 16  further comprising an antireflection layer between the color filters. 
     
     
         18 . The solid-state imaging device of  claim 16  further comprising an antireflection layer between the color filters and overlain by the mixed color prevention layer. 
     
     
         19 . The solid-state imaging device of  claim 16 , wherein the color filters and photoelectric conversion elements are arranged in a Bayer pattern. 
     
     
         20 . The solid-state imaging device of  claim 16 , wherein the color filters and photoelectric conversion elements are arranged in a BGBW array.