Coating for performance enhancement of semiconductor apparatus

Abstract

A plasma processing chamber having advanced coating for the showerhead and for an extended bottom electrode. The extended bottom electrode can be formed by one or more of the focus ring, cover ring, and plasma confinement ring. The extended electrode can be formed using a one-piece composite cover ring. The composite cover ring may be made of Al 2 O 3 and include a Y 2 O 3 plasma resistant coating. The plasma confinement ring may include a flow equalization ion shield that may also be provided with the plasma resistant coating. The plasma resistant coating of the extended electrode may have elements matching that of the showerhead.

What is claimed is: 
     
         1 . A plasma processing chamber for processing substrate, comprising:
 a showerhead assembly comprising a perforated gas plate having a plurality of gas injection holes and a plasma-facing surface, the plasma-facing surface having a plasma resistant coating containing yttrium;   a chuck for supporting the substrate;   a focus ring provided around the substrate;   a cover ring provided around the focus ring; and,   a plasma confinement ring provided around the chuck; and   wherein plasma-facing surface of at least one of the focus ring, cover ring, and plasma confinement ring is coated with the plasma resistant coating.   
     
     
         2 . The plasma processing chamber of  claim 1 , wherein the plasma resistant coating on the plasma-facing surface of the perforate gas plate and the plasma resistant coating on the plasma-facing surface of the focus ring, cover ring and/or plasma confinement ring are of the same material composition. 
     
     
         3 . The plasma processing chamber of  claim 1 , wherein the perforated plate further incorporates a grounding ring. 
     
     
         4 . The plasma processing chamber of  claim 3 , wherein the perforated plate comprises SiC. 
     
     
         5 . The plasma processing chamber of  claim 3 , wherein the perforated plate comprises Al alloy. 
     
     
         6 . The plasma processing chamber of  claim 1 , wherein the focus ring and the cover ring comprise a single-piece composite cover ring. 
     
     
         7 . The plasma processing chamber of  claim 6 , wherein the composite cover ring comprises a yttrium-based coating. 
     
     
         8 . The plasma processing chamber of  claim 7 , wherein the composite cover ring comprises Al 2 O 3  and the yttrium-based coating comprises Y 2 O 3 . 
     
     
         9 . The plasma processing chamber of  claim 8 , wherein the composite cover ring is ungrounded to form an extended RF electrode. 
     
     
         10 . The plasma processing chamber of  claim 1 , wherein the plasma confinement ring comprises a flow equalization ion shield having Y 2 O 3  coating. 
     
     
         11 . The plasma processing chamber of  claim 1 , wherein the focus ring and the cover ring comprise a single composite ring made of the solid material selected from Si, SIC, Y 2 O 3 , Quartz, and Al 2 O 3 , and having plasma resistant coatings selected from Y 2 O 3 , YF 3 , ErO 2 , SiC, Si 3 N 4 , ZrO 2 , and Al 2 O 3 . 
     
     
         12 . The plasma processing chamber of  claim 1 , wherein the plasma resistant coating of the perforated plate comprises Y 2 O 3  coating having a dense structure with random crystal orientation and with a porosity less than 1% and a surface roughness above 1 um. 
     
     
         13 . The plasma processing chamber of  claim 12 , wherein the perforated plate further comprises an intermediate layer or coating formed over the plasma-facing surface under the plasma resistant coating, wherein the intermediate coating layer has a surface roughness above 4 um. 
     
     
         14 . The plasma processing chamber of  claim 12 , wherein the plasma-facing surface of at least one of the focus ring, cover ring, and plasma confinement ring is coated with the plasma resistant coating that comprises Y 2 O 3  coating having a dense structure with random crystal orientation and with a porosity less than 1%. 
     
     
         15 . A method for fabricating a plasma processing chamber, comprising:
 fabricating a showerhead assembly, the showerhead assembly comprising a perforated plate;   fabricating a focus ring, a cover ring, and a plasma confinement ring;   using a plasma enhanced physical vapor deposition to apply a plasma resistant coating to the perforated plate and to at least one of the focus ring, the cover ring, and the plasma confinement ring.   
     
     
         16 . The method of  claim 15 , wherein fabricating the showerhead assembly comprises fabricating the perforated plate from SiC. 
     
     
         17 . The method of  claim 15 , wherein fabricating the showerhead assembly comprises fabricating the perforated plate from Al alloy. 
     
     
         18 . The method of  claim 16 , wherein fabricating the showerhead assembly comprises fabricating an integrated perforated plate and grounding ring. 
     
     
         19 . The method of  claim 15 , wherein fabricating the focus ring and the cover ring comprises fabricating a single-piece composite cover ring. 
     
     
         20 . The method of  claim 19 , wherein fabricating the composite cover ring comprises fabricating the composite cover ring from Al 2 O 3  and applying a Y 2 O 3  coating. 
     
     
         21 . The method of  claim 20 , further comprising coupling the composite cover ring to RF power supplier to form an extended electrode. 
     
     
         22 . The method of  claim 15 , wherein using a plasma enhanced physical vapor deposition comprise using source material containing Yttrium.