US2014111720A1PendingUtilityA1
Liquid crystal panel substrate with light-shielding film in a pixel region, liquid crystal panel, and electronic equipment and projection type display device both using the same to reduce light leakage
Est. expiryOct 22, 2016(expired)· nominal 20-yr term from priority
Inventors:Masahiro Yasukawa
H10D 86/00G02F 1/133502G02F 1/136209G02F 1/136277G02F 1/133512G02F 1/136227G02F 1/133345H04N 9/3141G02F 2203/02G02F 1/133553G02F 1/134363
57
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
A substrate is provided having a pixel region including a pixel electrode and a switching element. A periphery region in the periphery of the pixel region includes a first light-shielding film, the first light-shielding film being formed from the same layer as the pixel electrode. A passivation film that covers the pixel electrode and the first light-shielding film is provided.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A substrate for a display device, comprising:
a plurality of electrodes that are formed in a pixel region, each of the plurality of electrodes being positioned at a first position corresponding to one pixel of a plurality of pixels; a plurality of first switching elements that are formed in the pixel region, each of the plurality of first switching elements being positioned at a second position corresponding to one pixel of the plurality of pixels; a light shielding film that covers at least a part of one first switching element of the plurality of first switching elements; a driving circuit that is positioned outside of the pixel region, the driving circuit including a plurality of second switching elements; and a wire that is positioned in the driving circuit, the wire being electrically connected to one second switching element of the plurality of second switching elements.
2 . The substrate according to claim 1 ,
the light shielding film being formed in a first layer in which the wire is formed.
3 . The substrate according to claim 1 ,
a material constituting the light shielding film being identical with a material constituting the wire.
4 . The substrate according to claim 2 ,
the plurality of first switching elements being a plurality of first transistors, a gate of one first transistor of the plurality of first transistors being formed between the first layer and a semiconductor region including a source and a drain of the one first transistor.
5 . A display device comprising:
the substrate of claim 1 ; a transparent substrate having a counter electrode and being opposed to the substrate, the transparent substrate being separated from the substrate by a gap; and a liquid crystal material encapsulated into the gap between the substrate and the transparent substrate.
6 . An electronic device comprising the display device of claim 5 as a display section.
7 . A projection display device comprising:
the electronic device of claim 6 ; a light source; the display device modulating the light from the light source; and a projection lens for projecting the light modulated by the display device.
8 . A substrate for a display device, comprising:
a plurality of electrodes that are formed in a pixel region, each of the plurality of electrodes being positioned at a first position corresponding to one pixel of a plurality of pixels; a plurality of first switching elements that are formed in the pixel region, each of the plurality of first switching elements being positioned at a second position corresponding to one pixel of the plurality of pixels; a metal layer that overlaps at least a part of one first switching element of the plurality of first switching elements; a driving circuit that is positioned outside of the pixel region, the driving circuit including a plurality of second switching elements; and a wire that is positioned in the driving circuit, the wire being electrically connected to one second switching element of the plurality of second switching elements.
9 . The substrate according to claim 8 ,
the metal layer being formed in a first layer in which the wire is formed.
10 . The substrate according to claim 8 ,
a material constituting the metal layer being identical with a material constituting the wire.
11 . The substrate according to claim 9 ,
the plurality of first switching elements being a plurality of first transistors, a gate of one first transistor of the plurality of first transistors being formed between the first layer and a semiconductor region including a source and a drain of the one first transistor.
12 . The substrate according to claim 11 ,
the semiconductor region being formed in a well.
13 . A substrate for a display device, comprising:
a plurality of electrodes that are formed in a pixel region, each of the plurality of electrodes being positioned at a first position corresponding to one pixel of a plurality of pixels; a plurality of first transistors that are formed in the pixel region, each of the plurality of first transistors being positioned at a second position corresponding to one pixel of the plurality of pixels; a metal layer that covers at least a part of one first transistor of the plurality of first transistors; a driving circuit that is positioned outside of the pixel region, the driving circuit including a plurality of second transistors; and a wire that is positioned in the driving circuit, the wire being electrically connected to one second transistor of the plurality of second transistors.
14 . The substrate according to claim 13 ,
the metal layer covering a first gate of the first transistor.
15 . The substrate according to claim 13 .
the metal layer covering at least a part of a first semiconductor region of the first transistor, the first semiconductor region including a first source and a first drain of the first transistor.
16 . The substrate according to claim 15 ,
the first semiconductor region being formed in a well.
17 . The substrate according to claim 8 ,
the plurality of second switching elements being a plurality of second transistors.
18 . The substrate according to claim 8 ,
the wire being electrically connected to a third switching element of the plurality of second switching elements.
19 . A substrate for a display device, comprising:
a plurality of first switching elements that are formed in a pixel region; a metal layer that overlaps at least a part of one first switching element of the plurality of first switching elements; a driving circuit that is positioned outside of the pixel region, the driving circuit including a plurality of second switching elements; and a wire that is positioned in the driving circuit, the wire being electrically connected to one second switching element of the plurality of second switching elements.
20 . The substrate according to claim 19 ,
the metal layer being formed in a first layer in which the wire is formed.
21 . The substrate according to claim 19 ,
a material constituting the metal layer being identical with a material constituting the wire.
22 . The substrate according to claim 20 ,
the plurality of first switching elements being a plurality of first transistors, a gate of one first transistor of the plurality of first transistors being formed between the first layer and a semiconductor region including a source and a drain of the one first transistor.
23 . A substrate for a display device, comprising:
a plurality of first transistors that are formed in a pixel region; a metal layer that overlaps at least a part of one first transistors of the plurality of first transistors; a driving circuit that is positioned outside of the pixel region, the driving circuit including a plurality of second transistors; and a wire that is positioned in the driving circuit, the wire being electrically connected to one second transistor of the plurality of second transistors.
24 . The substrate according to claim 23 ,
the metal layer being formed in a first layer in which the wire is formed.
25 . The substrate according to claim 23 ,
a material constituting the metal layer being identical with a material constituting the wire.
26 . The substrate according to claim 24 ,
a gate of one first transistor of the plurality of first transistors being formed between the first layer and a semiconductor region including a source and a drain of the one first transistor.Join the waitlist — get patent alerts
Track US2014111720A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.