Method of growing silicon single crystal

Abstract

Disclosed is a method of growing a silicon single crystal. The method includes preparing a silicon melt, adding a dopant having a lower melting point than the silicon melt to the silicon melt, and growing a silicon single crystal from the silicon melt to which the dopant is added in the order of a neck, a shoulder, and a body. During the silicon single crystal growth, the length of a neck is adjusted in the range of 35 to 45 cm, and a ratio of inert gas quantity to pressure of a chamber is adjusted to 1.5 or less.

1 . A method of growing a silicon single crystal, the method comprising:
 preparing a silicon melt;   adding a dopant having a lower melting point than the silicon melt to the silicon melt; and   growing a silicon single crystal from the silicon melt to which the dopant is added in the order of a neck, a shoulder, and a body,   wherein a length of the neck is adjusted to 35 to 45 cm, and a ratio of inert gas quantity to pressure of a chamber is adjusted to 1.5 or less in the growing of the silicon single crystal.   
     
     
         2 . The method according to  claim 1 , wherein the adjusting of the ratio of inert gas quantity to pressure of a chamber is applied to from growth of the shoulder in the growing of the silicon single crystal. 
     
     
         3 . The method according to  claim 1 , wherein a rotation rate of the silicon single crystal is in the range of 12 to 16 rpm in the growing of the silicon single crystal. 
     
     
         4 . The method according to  claim 1 , wherein a rotation rate of a crucible containing the silicon melt is in the range of 12 to 16 rpm in the growing of the silicon single crystal. 
     
     
         5 . The method according to  claim 1 , wherein a solid-liquid interface of the silicon single crystal is controlled to have a step difference of 20% or less between the center of the solid-liquid interface and an edge portion of the solid-liquid interface in the growing of the silicon single crystal. 
     
     
         6 . The method according to  claim 5 , wherein the control of the step difference of the solid-liquid interface is applied to a late stage of the growth of the shoulder in the growing of the silicon single crystal. 
     
     
         7 . The method according to  claim 1 , wherein a radial resistivity gradient (RRG) of the silicon single crystal is in the range of 1 to 15% in the growing of the silicon single crystal. 
     
     
         8 . The method according to  claim 1 , wherein resistivity increases in the solid-liquid interface of the silicon single crystal, and the increase of resistivity is controlled to allow temperature difference causing resistivity increase to exhibit at intervals of about 10 to about 15% on average in the growing of the silicon single crystal. 
     
     
         9 . The method according to  claim 8 , wherein the control of the resistivity increase is applied to the growth of the shoulder in the growing of the silicon single crystal. 
     
     
         10 . The method according to  claim 1 , wherein a growth rate of the silicon single crystal at an initial stage of growth of the body has a negative gradient in the growing of the silicon single crystal. 
     
     
         11 . The method according to  claim 10 , wherein the initial stage of the growth of the body corresponds to a solidification rate of 25% or less. 
     
     
         12 . The method according to  claim 10 , wherein the growth rate of the silicon single crystal is reduced to 0.1 to 0.3 mm/min. 
     
     
         13 . The method according to  claim 1 , wherein the growth rate of the silicon single crystal has a negative gradient and a positive gradient during the growth of the body, wherein the negative gradient varies within 10 to 20%, and the positive gradient varies within 5 to 10% in the growth of the silicon single crystal. 
     
     
         14 . The method according to  claim 13 , wherein the ranges of variation of the negative and positive gradients are applied to a point when the gradient of the growth rate of the silicon single crystal is changed from negative to positive.