Semiconductor device manufacturing method, semiconductor device, semiconductor device manufacturing apparatus and storage medium

Abstract

In order to obtain a semiconductor device having an embedded electrode with low cost and high reliability, a semiconductor device manufacturing method includes forming a first film made of a metal oxide within an opening which is formed in an insulating film formed on a surface of a substrate; performing a hydrogen radical treatment by irradiating atomic hydrogen to the first film; forming a second film made of a metal within the opening after the performing of the hydrogen radical treatment; and forming an electrode made of a metal within the opening after the forming of the second film.

We claim: 
     
         1 . A semiconductor device manufacturing method, comprising:
 forming a first film made of a metal oxide within an opening which is formed in an insulating film formed on a surface of a substrate;   performing a hydrogen radical treatment by irradiating atomic hydrogen to the first film;   forming a second film made of a metal within the opening after the performing of the hydrogen radical treatment; and   forming an electrode made of a metal within the opening after the forming of the second film.   
     
     
         2 . The semiconductor device manufacturing method of  claim 1 ,
 wherein the performing of the hydrogen radical treatment improves one of incubation time decrease, thickness uniformity, sheet resistance and adhesiveness of the second film.   
     
     
         3 . The semiconductor device manufacturing method of  claim 1 ,
 wherein the hydrogen radical treatment is performed in a state where the substrate is heated.   
     
     
         4 . The semiconductor device manufacturing method of  claim 1 ,
 wherein the performing of the hydrogen radical treatment reduces C component in the first film.   
     
     
         5 . The semiconductor device manufacturing method of  claim 1 ,
 wherein the atomic hydrogen is generated by remote plasma.   
     
     
         6 . The semiconductor device manufacturing method of  claim 1 ,
 wherein the first film contains an oxide of one or more elements selected from the group consisting of Mg, Al, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, Sn, Ba, Hf, Ta and Ir.   
     
     
         7 . The semiconductor device manufacturing method of  claim 1 ,
 wherein the first film contains a Mn oxide.   
     
     
         8 . The semiconductor device manufacturing method of  claim 1 ,
 wherein the first film is formed by a CVD method, an ALD method or a supercritical CO 2  method.   
     
     
         9 . The semiconductor device manufacturing method of  claim 1 ,
 wherein the first film is formed by a thermal CVD method, a thermal ALD method, a plasma CVD method, a plasma ALD method or a supercritical CO 2  method.   
     
     
         10 . The semiconductor device manufacturing method of  claim 1 ,
 wherein the second film contains one or more elements selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir and Pt.   
     
     
         11 . The semiconductor device manufacturing method of  claim 1 ,
 wherein the second film is formed by a CVD method, an ALD method or a supercritical CO 2  method.   
     
     
         12 . The semiconductor device manufacturing method of  claim 1 ,
 wherein the second film is formed by a thermal CVD method, a thermal ALD method, a plasma CVD method, a plasma ALD method or a supercritical CO 2  method.   
     
     
         13 . The semiconductor device manufacturing method of  claim 1 ,
 wherein the electrode is made of copper or a material containing copper.   
     
     
         14 . The semiconductor device manufacturing method of  claim 1 ,
 wherein the electrode is formed by one or more methods selected from the group consisting of a thermal CVD method, a thermal ALD method, a plasma CVD method, a plasma ALD method, a PVD method, an electroplating method, an electroless plating method and a supercritical CO 2  method.   
     
     
         15 . A semiconductor device comprising a film structure formed by a semiconductor device manufacturing method as claimed in  claim 1 . 
     
     
         16 . A semiconductor device manufacturing apparatus that forms a first film made of a metal oxide within an opening which is formed in an insulating film formed on a surface of a substrate; forms a second film made of a metal within the opening; and forms an electrode made of a metal within the opening,
 wherein atomic hydrogen is irradiated to the first film.   
     
     
         17 . The semiconductor device manufacturing apparatus of  claim 16 , comprising:
 a remote plasma generating unit configured to generate the atomic hydrogen.   
     
     
         18 . The semiconductor device manufacturing apparatus of  claim 16 , comprising:
 a heating unit configured to heat the substrate.   
     
     
         19 . A computer-readable storage medium having stored thereon computer-executable instructions that, in response to execution, cause a system controller of a semiconductor device manufacturing apparatus to perform a semiconductor device manufacturing method as claimed in  claim 1 .