Light emitting diode having electrode pads

Abstract

A light-emitting diode according to an exemplary embodiment of the present invention includes at least two light emitting cells disposed on a substrate and spaced apart from each other, wherein each of the at least two light emitting cells comprises a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Each of the at least two light emitting cells comprises a cathode disposed on the first conductivity-type semiconductor layer, an anode disposed on the second conductivity-type semiconductor layer, and the cathode of a first light emitting cell of the at least two light emitting cells is electrically connected in series to the anode of a second light emitting cell of the at least two light emitting cells adjacent to the first light emitting cell by an interconnecting section.

What is claimed is: 
     
         1 . A light emitting diode, comprising:
 a substrate; and   at least two light emitting cells disposed on the substrate and spaced apart from each other,   wherein each of the at least two light emitting cells comprises:
 a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; 
 a cathode disposed on the first conductivity-type semiconductor layer; and 
 an anode disposed on the second conductivity-type semiconductor layer, and 
   wherein the cathode of a first light emitting cell of the at least two light emitting cells is electrically connected in series to the anode of a second light emitting cell of the at least two light emitting cells adjacent to the first light emitting cell by an interconnecting section.   
     
     
         2 . The light emitting diode of  claim 1 , further comprising at least two first extensions extending from the cathode of each of the at least two light emitting cells. 
     
     
         3 . The light emitting diode of  claim 2 , further comprising at least two second extensions extending from the anode of each of the at least two light emitting cells. 
     
     
         4 . The light emitting diode of  claim 3 , further comprising electrode pads disposed at edges of the light emitting diode, respectively. 
     
     
         5 . The light emitting diode of  claim 4 , wherein the electrode pads comprise a first electrode pad and a second electrode pad. 
     
     
         6 . The light emitting diode of  claim 5 , wherein the first electrode pad is connected to the anode of each of the at least two light emitting cells, and the second electrode pad is connected to the cathode of each of the at least two light emitting cells. 
     
     
         7 . The light emitting diode of  claim 1 , further comprising a transparent electrode layer disposed on the second conductivity-type semiconductor layer of each of the at least two light emitting cells. 
     
     
         8 . The light emitting diode of  claim 3 , wherein the first extensions are disposed between the second extensions adjacent to the cathode. 
     
     
         9 . The light emitting diode of  claim 3 , wherein the second extensions are disposed between the first extensions adjacent to the cathode and the anode. 
     
     
         10 . The light emitting diode of  claim 2 , wherein the first extensions are disposed symmetrically with respect to each other. 
     
     
         11 . The light emitting diode of  claim 3 , wherein the second extensions are disposed symmetrically with respect to each other. 
     
     
         12 . The light emitting diode of  claim 3 , wherein the first extensions and the second extensions are disposed alternately to each other. 
     
     
         13 . The light emitting diode of  claim 3 , wherein the first extensions are disposed opposite to the second extensions in each light emitting cell. 
     
     
         14 . The light emitting diode of  claim 2 , wherein a width of the interconnecting section equals a width of the first extensions. 
     
     
         15 . The light emitting diode of  claim 5 , further comprising an insulation layer disposed between the first conductivity-type semiconductor layer and the second electrode pad, and
 wherein the insulation layer insulates the second electrode pad from the first conductivity-type semiconductor layer.   
     
     
         16 . The light emitting diode of  claim 15 , wherein the at least two first extensions are disposed on the first conductivity-type semiconductor layer and electrically connected to the first electrode pad. 
     
     
         17 . The light emitting diode of  claim 16 , wherein the at least two second extensions are electrically connected to the second conductivity-type semiconductor layer.