US2014092679A1PendingUtilityA1

Memory device and writing method thereof

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Assignee: ELPIDA MEMORY INCPriority: Nov 20, 2008Filed: Dec 4, 2013Published: Apr 3, 2014
Est. expiryNov 20, 2028(~2.3 yrs left)· nominal 20-yr term from priority
Inventors:Koji SatoKiyoshi NakaiKenji Mae
G11C 7/1096G11C 7/1078G11C 2013/0078G11C 13/0004G11C 13/0069
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Claims

Abstract

A write amplifier for driving a bit line connected to a selected phase change memory cell drives the bit line with a first current driving capability and then drives the bit line with a second current driving capability lower than the first current driving capability.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A semiconductor device comprising a write amplifier adapted to drive a bit line, connected to a selected phase change memory cell, with a first current driving capability and then to drive said bit line to a write voltage, corresponding to data to be written, with a second current driving capability lower than said first current driving capability.

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