Thin film forming apparatus and computer-readable medium

Abstract

A control unit heats a reaction pipe to a load temperature by controlling a temperature-raising heater 16 , and then makes semiconductor wafers received in the reaction pipe. Next, the control unit heats the reaction pipe in which the semiconductor wafers are received to a film formation temperature by controlling the temperature-raising heater, and then forms thin films on the semiconductor wafers by supplying a film forming gas into the reaction pipe from a process gas introducing pipe. Also, the control unit sets the load temperature to a temperature higher than the film formation temperature.

What is claimed is: 
     
         1 . A thin film forming apparatus comprising:
 a reaction chamber in which an object is received;   a heating unit which heats the reaction chamber to a predetermined temperature;   a film forming gas supply unit which supplies a film forming gas into the reaction chamber; and   a control unit which controls each portion of the film forming apparatus,   wherein the control unit
 heats the reaction chamber to a load temperature by controlling the heating unit, and then makes the object received in the reaction chamber, 
 heats the reaction chamber to a film formation temperature by controlling the heating unit, and then forms a thin film on the object by supplying a film forming gas into the reaction chamber by controlling the film forming gas supply unit, and 
 sets the load temperature to a temperature higher than the film formation temperature. 
   
     
     
         2 . A non-transitory computer-readable medium storing a program for enabling a computer to serve as
 a heating unit which heats a reaction chamber, in which an object is received, to a predetermined temperature;   a film forming gas supply unit which supplies a film forming gas into the reaction chamber; and   a film forming unit which heats the reaction chamber to a load temperature by controlling the heating unit and then makes the object received in the reaction chamber, heats the reaction chamber to a film formation temperature by controlling the heating unit and then forms a thin film on the object by supplying a film forming gas into the reaction chamber by controlling the film forming gas supply unit, and sets the load temperature to a temperature higher than the film formation temperature.