Nickel plating solution and method for forming nickel plating layer using the same

Abstract

Disclosed herein are a nickel plating solution and a method for forming a nickel layer on an external electrode of a chip component by using the nickel plating solution, the nickel plating solution including: a nickel ion; a chloride ion; and a pH buffer, wherein the pH buffer is used by mixing an inorganic acid, and an organic acid and a salt thereof, so that the damage to a body of the chip component can be reduced by containing organic acid and a salt thereof in the nickel plating solution for forming the nickel plating layer on the external electrode of the chip component having a body formed of a material including ferrite or manganese oxide.

What is claimed is: 
     
         1 . A nickel plating solution, comprising:
 a nickel ion;   a chloride ion; and   a pH buffer,   wherein the pH buffer is used by mixing an inorganic acid, and an organic acid and a salt thereof.   
     
     
         2 . The nickel plating solution according to  claim 1 , wherein the pH buffer is contained in a concentration of 30˜100 g/L and the organic acid and the salt thereof are contained in a concentration of 20˜50 g/L in the pH buffer. 
     
     
         3 . The nickel plating solution according to  claim 1 , wherein the organic acid and the salt thereof are at least one selected from the group consisting of succinic acid, gluconic acid, lactic acid, and a salt thereof. 
     
     
         4 . The nickel plating solution according to  claim 1 , wherein the nickel ion is contained in a concentration of 50˜100 g/L and the chloride ion is contained in a concentration of 10˜50 g/L. 
     
     
         5 . The nickel plating solution according to  claim 1 , wherein it has a pH value of 4.5˜6.0. 
     
     
         6 . A method for forming a nickel plating layer in which the nickel plating layer is formed on an external electrode of a chip component, wherein the nickel plating layer is formed by using a nickel electroplating solution containing a nickel ion, a chloride ion, and a pH buffer where an inorganic acid, and an organic acid and a salt thereof are mixed. 
     
     
         7 . The method according to  claim 6 , wherein a body of the chip component is formed of a semiconductor ceramic material including ferrite; or Mn, Ni, Al or Co. 
     
     
         8 . The method according to  claim 6 , wherein the chip component is an inductor or a thermistor. 
     
     
         9 . The method according to  claim 6 , wherein the forming of the nickel plating layer is performed under a DC current application condition. 
     
     
         10 . The method according to  claim 6 , wherein in the forming of the nickel plating layer, a plating temperature of the plating solution is 45˜55° C.