Methods of fabricating polycrystalline diamond compacts

Abstract

Embodiments relate to methods of manufacturing polycrystalline diamond compacts (“PDCs”). In an embodiment, a method of fabricating a PDC includes positioning a plurality of diamond particles adjacent to a cemented carbide material. The cemented carbide material includes one or more types of tungsten-containing eta phases. The method further includes subjecting the plurality of diamond particles and the cemented carbide material to a high-pressure/high-temperature process effective to sinter the plurality of diamond particles so that a polycrystalline diamond table is formed without tungsten carbide grains of the cemented carbide material exhibiting abnormal grain growth that project into the polycrystalline diamond table.

What is claimed is: 
     
         1 . A method of fabricating a polycrystalline diamond compact, comprising:
 forming an assembly including a plurality of tungsten-carbide-containing particles positioned between an at least partially leached polycrystalline diamond table and a cemented carbide substrate; and   subjecting the assembly to a high-pressure/high-temperature process to at least partially infiltrate the at least partially leached polycrystalline diamond table with a metallic infiltrant.   
     
     
         2 . The method of  claim 1  wherein the plurality of tungsten-carbide-containing include a plurality of carbon-deficient tungsten carbide particles. 
     
     
         3 . The method of  claim 1  wherein the plurality of tungsten-carbide-containing include a plurality of cemented carbide particles including one or more types of tungsten-containing eta phases. 
     
     
         4 . The method of  claim 1  wherein the cemented carbide substrate includes one or more types of tungsten-containing eta phases. 
     
     
         5 . The method of  claim 1  wherein the at least partially leached polycrystalline diamond table is formed by a method including:
 forming an assembly including a plurality of diamond particles positioned adjacent to a cemented carbide material, wherein the cemented carbide material includes one or more types of tungsten-containing eta phases; 
 subjecting the assembly to an additional high-pressure/high-temperature process in the presence of a metal-solvent catalyst in which carbon reacts with at least some of the one or more types of tungsten-containing eta phases of the cemented carbide material and the plurality of diamond particles are sintered to form a polycrystalline diamond table; 
 separating the cemented carbide material from the polycrystalline diamond table; and 
 at least partially leaching at least a portion of the metal-solvent catalyst from the polycrystalline diamond table to form the at least partially leached polycrystalline diamond table, wherein the at least partially leached polycrystalline diamond table includes a tungsten-containing material and is substantially free of defects formed due to abnormal grain growth of tungsten carbide grains of the cemented carbide material during the additional high-pressure/high-temperature process. 
 
     
     
         6 . The method of  claim 5  wherein the defects include pits, cracks, or combinations thereof. 
     
     
         7 . The method of  claim 5  wherein the tungsten-containing material of the at least partially leached polycrystalline diamond table includes at least one member selected from the group consisting of substantially pure tungsten, a tungsten alloy, and tungsten carbide. 
     
     
         8 . The method of  claim 5  wherein the at least partially leached polycrystalline diamond table includes a substrate interfacial surface that is positioned adjacent to a table interfacial surface of the cemented carbide substrate and is substantially free of the defects. 
     
     
         9 . The method of  claim 1  wherein each of the cemented carbide substrate and the at least partially leached polycrystalline diamond table is substantially free of chromium. 
     
     
         10 . The method of  claim 1  wherein subjecting the assembly to a high-pressure/high-temperature process to at least partially infiltrate the at least partially leached polycrystalline diamond table with a metallic infiltrant includes infiltrating the metallic infiltrant from the cemented carbide substrate. 
     
     
         11 . The method of  claim 1  wherein the cemented carbide substrate includes substantially only one or more types of tungsten-containing eta phases cemented together with the metallic infiltrant. 
     
     
         12 . The method of  claim 1  wherein the at least partially leached polycrystalline diamond table is substantially free of a metal-solvent catalyst used in the sintering thereof. 
     
     
         13 . The method of  claim 1  wherein the at least partially leached polycrystalline diamond table includes bonded diamond grains exhibiting diamond-to-diamond bonding therebetween. 
     
     
         14 . The method of  claim 1  wherein the at least partially leached polycrystalline diamond table includes a substrate interfacial surface that is positioned adjacent to a table interfacial surface of the cemented carbide substrate and is substantially planar. 
     
     
         15 . A method of fabricating a polycrystalline diamond compact, comprising:
 forming a first assembly including a plurality of diamond particles positioned adjacent to a cemented carbide material, wherein the cemented carbide material includes one or more types of tungsten-containing eta phases;   subjecting the first assembly to a first high-pressure/high-temperature process in the presence of a metal-solvent catalyst to form a polycrystalline diamond table;   separating the cemented carbide material from the polycrystalline diamond table;   at least partially leaching at least a portion of the metal-solvent catalyst from the polycrystalline diamond table to form an at least partially leached polycrystalline diamond table, wherein the at least partially leached polycrystalline diamond table includes a tungsten-containing material and is substantially free of defects formed due to abnormal grain growth of tungsten carbide grains of the cemented carbide material during the first high-pressure/high-temperature process;   forming a second assembly including a plurality of tungsten-carbide-containing particles positioned between the at least partially leached polycrystalline diamond table and a cemented carbide substrate; and   subjecting the second assembly to a second high-pressure/high-temperature process to at least partially infiltrate the at least partially leached polycrystalline diamond table with a metallic infiltrant.   
     
     
         16 . The method of  claim 15  wherein the plurality of tungsten-carbide-containing particles include a plurality of carbon-deficient tungsten carbide particles. 
     
     
         17 . The method of  claim 15  wherein the plurality of tungsten-carbide-containing particles include a plurality of cemented carbide particles including one or more types of tungsten-containing eta phases. 
     
     
         18 . The method of  claim 15  wherein the cemented carbide substrate includes one or more types of tungsten-containing eta phases. 
     
     
         19 . The method of  claim 15  wherein the at least partially leached polycrystalline diamond table includes a substrate interfacial surface that is positioned adjacent to a table interfacial surface of the cemented carbide substrate and is substantially planar. 
     
     
         20 . A method of fabricating a polycrystalline diamond compact, comprising:
 forming a first assembly including a plurality of diamond particles positioned adjacent to a cemented carbide material;   subjecting the first assembly to a first high-pressure/high-temperature process in the presence of a metal-solvent catalyst in which carbon reacts with at least some of the one or more types of tungsten-containing eta phases of the cemented carbide material and the plurality of diamond particles are sintered to form a polycrystalline diamond table;   separating the cemented carbide material from the polycrystalline diamond table;   at least partially leaching at least a portion of the metal-solvent catalyst from the polycrystalline diamond table to form an at least partially leached polycrystalline diamond table;   forming a second assembly including a plurality of tungsten-carbide-containing particles positioned between the at least partially leached polycrystalline diamond table and a cemented carbide substrate; and   subjecting the second assembly to a second high-pressure/high-temperature process to at least partially infiltrate the at least partially leached polycrystalline diamond table with a metallic infiltrant from the cemented carbide substrate.