Semiconductor device and method for manufacturing the same

Abstract

A semiconductor device includes: a contact hole formed over a structure including a conductive pattern; a contact plug formed in the contact hole; a first metal silicide film surrounding the contact plug; and a second metal silicide film formed over the contact plug.

1 . A semiconductor device comprising:
 an interlayer insulation film formed over a structure including a conductive pattern;   a contact hole disposed in the interlayer insulation film and having a depth sufficient to reach the structure including the conductive pattern, the contact hole having a center portion and an edge portion;   a contact plug provided in the center portion of the contact hole;   a first metal silicide film provided in the edge portion of the contact hole; and   a second metal silicide film disposed over the contact plug.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the contact plug includes a silicon material. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the contact plug includes a polysilicon material. 
     
     
         4 . The semiconductor device according to  claim 1 , wherein the second metal silicide film is diffused into the contact plug. 
     
     
         5 - 23 . (canceled) 
     
     
         24 . A semiconductor device comprising:
 a contact plug epitaxially grown from a semiconductor substrate;   a first metal silicide film surrounding the contact plug; and   a second metal silicide film disposed over the contact plug.   
     
     
         25 . The semiconductor device according to  claim 24 , wherein the second metal silicide film is diffused into the contact plug. 
     
     
         26 . A method for forming a semiconductor device comprising:
 epitaxially growing a contact plug over a semiconductor substrate using the semiconductor substrate as a seed layer;   forming a sacrificial insulation film spacer surrounding the contact plug;   forming an interlayer insulation film over the semiconductor substrate;   forming an air spacer by removing the sacrificial insulation film spacer;   forming a first metal silicide film in the air spacer; and   forming a second metal silicide film over the contact plug.   
     
     
         27 . The method according to  claim 26 , wherein forming the sacrificial insulation film spacer includes:
 forming a sacrificial insulation film over the contact plug; and   etching back the sacrificial insulation film.   
     
     
         28 . The method according to  claim 26 , wherein the sacrificial insulation film includes an oxide film or a nitride film. 
     
     
         29 . The method according to  claim 26 , wherein forming the air spacer includes performing a dip-out process removing the sacrificial insulation film spacer. 
     
     
         30 . The method according to  claim 26 , wherein forming the first metal silicide film and the second metal silicide film includes:
 forming a metal layer over the contact plug and the interlayer insulation film to fill the air spacer; and   performing a silicification process on the metal layer.   
     
     
         31 . The method according to  claim 30 , wherein the metal layer includes titanium (Ti), nickel (Ni), tantalum (Ta), tungsten (W) or cobalt (Co). 
     
     
         32 . The method according to  claim 26 , wherein the second metal silicide film is diffused into the contact plug.