Display panel and manufacturing method of the same

Abstract

In one aspect, a display panel and a manufacturing method of the same is provided. The display panel includes a non-emission region layer having a plurality of emission regions and a connection region that is open to connect adjacent emission regions; an organic emission layer formed in each of the plurality of emission regions; a counter electrode formed in the emission regions and the connection region; and an encapsulation layer formed on the counter electrode.

What is claimed is: 
     
         1 . A display panel comprising:
 a non-emission region layer having a plurality of emission regions and a connection region that is open to connect adjacent emission regions;   an organic emission layer formed in each of the plurality of emission regions;   a counter electrode formed in the emission regions and the connection region; and   an encapsulation layer formed on the counter electrode.   
     
     
         2 . The display panel of  claim 1 , wherein the counter electrode comprises:
 a plurality of first counter electrodes individually formed on the organic emission layers; and   a second counter electrode formed in the connection region.   
     
     
         3 . The display panel of  claim 1 , wherein the encapsulation layer is formed of a low liquidus temperature material. 
     
     
         4 . The display panel of  claim 3 , wherein the low liquidus temperature material comprises at least one of tin fluorophosphates glass, tungsten-doped tin fluorophosphates glass, chalcogenide glass, tellurite glass, borate glass, and phosphate glass. 
     
     
         5 . The display panel of  claim 4 , wherein the low liquidus temperature material comprises tin fluorophosphates glass and the tin fluorophosphates glass comprises 20 to 80 weight % of tin (Sn), 2 to 20 weight % of phosphorus (P), 3 to 20 weight % of oxygen (O), and 10 to 36 weight % of fluorine (F). 
     
     
         6 . The display panel of  claim 1 , wherein the encapsulation layer has a melting point equal to or less than 200° C. 
     
     
         7 . The display panel of  claim 1 , wherein the plurality of emission regions are configured to be partially open. 
     
     
         8 . The display panel of  claim 1 , wherein the encapsulation layer is discontinuous. 
     
     
         9 . The display panel of  claim 8 , wherein the encapsulation layer is in the form of islands. 
     
     
         10 . The display panel of  claim 8 , wherein the encapsulation layer is in the form of strips. 
     
     
         11 . The display panel of  claim 1 , wherein the counter electrode includes at least one selected from the group consisting of aluminum (Al), magnesium (Mg), lithium (Li), calcium (Ca), lithium fluoride/calcium (LiF/Ca), and lithium fluoride/aluminum (LiF/Al). 
     
     
         12 . A manufacturing method of a display panel, the method comprising:
 a first step of forming a non-emission region layer having a plurality of emission regions and a connection region that is open to connect adjacent emission regions;   a second step of forming an encapsulation layer on the non-emission region layer where the plurality of emission regions and the connection region are not formed;   a third step of forming an organic emission layer in each of the emission regions; and   a fourth step of forming a counter electrode in the emission regions and the connection region, and melting the encapsulation layer to seal the counter electrode.   
     
     
         13 . The method of  claim 12 , wherein the second step comprises:
 a step of forming a mask for blocking the emission regions and the connection region; and   a step of patterning the encapsulation layer on the non-emission region layer by using the mask.   
     
     
         14 . The method of  claim 12 , wherein the encapsulation layer is formed on at least a portion of the non-emission region layer. 
     
     
         15 . The method of  claim 12 , wherein the fourth step comprises a step of tilting the non-emission region layer, the encapsulation layer, and the organic emission layer by a certain angle with respect to a ground surface. 
     
     
         16 . The method of  claim 12 , wherein the fourth step comprises a step of melting the encapsulation layer to a temperature equal to or less than 200° C. 
     
     
         17 . The method of  claim 12 , wherein the counter electrode comprises:
 a plurality of first counter electrodes individually formed on the organic emission layers; and   a second counter electrode for connecting the plurality of first counter electrodes.   
     
     
         18 . The method of  claim 12 , wherein the encapsulation layer is formed of a low liquidus temperature material. 
     
     
         19 . The method of  claim 18 , wherein the low liquidus temperature material comprises at least one of tin fluorophosphates glass, tungsten-doped tin fluorophosphates glass, chalcogenide glass, tellurite glass, borate glass, and phosphate glass. 
     
     
         20 . The method of  claim 19 , wherein the tin fluorophosphates glass comprises 20 to 80 weight % of tin (Sn), 2 to 20 weight % of phosphorus (P), 3 to 20 weight % of oxygen (O), and 10 to 36 weight % of fluorine (F).