Device for converting thermal energy into electrical energy

Abstract

A current source and method of producing the current source are provided. The current source includes a metal source, a buffer layer, a filter and a collector. An electrical connection is provided to the metal layer and semiconductor layer and a magnetic field applier may be also provided. The source metal has localized states at a bottom of the conduction band and probability amplification. The interaction of the various layers produces a spontaneous current. The movement of charge across the current source produces a voltage, which rises until a balancing reverse current appears. If a load is connected to the current source, current flows through the load and power is dissipated. The energy for this comes from the thermal energy in the current source, and the device gets cooler.

1 - 22 . (canceled) 
     
     
         23 . A method of forming a current source, the method comprising:
 depositing a source on a substrate, the source comprising a metal having a conduction band, fewer than about 1000 ppm localized states at a bottom of the conduction band, and probability amplification;   depositing a filter on the source; and   depositing a collector on the filter.   
     
     
         24 . The method of  claim 23 , further comprising depositing a buffer on the source before depositing the filter such that the buffer is disposed between the source and the filter, the buffer comprising at least one of a semiconductor or insulator. 
     
     
         25 . The method of  claim 23 , wherein the metal comprises a disordered metal. 
     
     
         26 . The method of  claim 25 , wherein the metal comprises a plurality of different metals in which the atoms of the different metals are randomly disposed. 
     
     
         27 . The method of  claim 23 , wherein the metal is a pure transition metal. 
     
     
         28 . The method of  claim 23 , wherein the metal comprises impurities, and if the metal is a non-transition metal, the impurities are in the same column of the periodic table as the non-transition metal, and if the metal is a transition metal, the impurities are in the same column as the transition metal or in a column to the right of the column of the transition metal. 
     
     
         29 . The method of  claim 23 , further comprising providing a magnetic field source to apply a magnetic field substantially perpendicular to the source, the metal substantially free of disorder. 
     
     
         30 . The method of  claim 29 , wherein a neighboring layer to the source comprises an electric field source that applies an alternating electric field to the source, the electric field non-parallel with magnetic field, the neighboring layer having a high density of optically active localized phonon modes. 
     
     
         31 . The method of  claim 23 , wherein the metal is a non-transition metal and the probability amplification is producible within about 100 Å of a physical surface of the metal. 
     
     
         32 . The method of  claim 23 , wherein deposition of the source, filter, and collector is performed under vacuum in a vacuum chamber. 
     
     
         33 . The method of  claim 23 , further comprising depositing multiple structures on the substrate, each structure comprising the source, filter, and collector. 
     
     
         34 - 40 . (canceled) 
     
     
         41 . A non-thermoelectric current source comprising:
 a source comprising a metal having a conduction band, localized states at a bottom of the conduction band, a Fermi surface and probability amplification, such that a substantial number of electrons in the localized states of the metal are energized to the Fermi surface of the metal;   a layer in contact with the source and having a forbidden energy band,   wherein the localized states of the metal align with the forbidden energy band of the layer; and   a collector connected with the source through the layer,   such that an interaction of the source, layer, and collector produces an electrical current and a voltage is developed across the current source that rises until balanced by a reverse current,   whereby when the current source is connected to a load, electrical current flows through the load and the temperature of the current source drops.   
     
     
         42 . The current source of  claim 41 , wherein the layer comprises a buffer, the buffer comprising at least 1 of a metal, semiconductor or insulator, and wherein the current source further comprises a filter between the buffer and the collector. 
     
     
         43 . The current source of  claim 42 , wherein the relative energy band relationship between the source and the buffer enables energetic electrons and holes in the source to reach the surface of the source, and wherein the energetic electrons and holes are transmitted through the buffer and selectively through the filter, such that an electric field develops in the filter. 
     
     
         44 . The current source of  claim 41 , wherein the metal comprises a disordered metal. 
     
     
         45 . The current source of  claim 44 , wherein the metal comprises a plurality of different metals in which the atoms of the different metals are randomly disposed. 
     
     
         46 . The current source of  claim 41 , further comprising a magnetic field source to apply a magnetic field substantially perpendicular to the source, the metal substantially free of disorder. 
     
     
         47 . The current source of  claim 46 , further comprising an electric field source to apply an alternating electric field to the source, the electric field non-parallel with magnetic field. 
     
     
         48 . The current source of  claim 41 , wherein the filter conducts high energy electrons and holes and substantially blocks the flow of all other charges.