US2014056064A1PendingUtilityA1

Memory system and operating method thereof

Assignee: SAMSUNG ELECTRONICS CO LTDPriority: Mar 2, 2010Filed: Oct 31, 2013Published: Feb 27, 2014
Est. expiryMar 2, 2030(~3.6 yrs left)· nominal 20-yr term from priority
G11C 16/3418G11C 11/5642G11C 16/3427G11C 16/26G11C 16/0483
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Claims

Abstract

Provided are a memory system and an operating method thereof. The operating method reads an observation memory cell at least one time with different read voltages to configure a first read data symbol, reads a plurality of interference memory cells adjacent to the observation memory cell at least one time with different read voltages to configure second read data symbols, and determines a logical value of the observation memory cell based on the first read data symbol and the second read data symbols.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An operating method of a memory system including a nonvolatile memory device, the operating method comprising:
 reading a plurality of first bits from an observation memory cell through a plurality of read operations using different read voltages to configure a first read data symbol;   reading a plurality of second bits from a plurality of interference memory cells adjacent to the observation memory cell through a plurality of read operations using different read voltages to configure second read data symbols; and   determining a logical value of the observation memory cell, based on the first read data symbol and the second read data symbols,   wherein the determining of a logical value comprises:   changing the first read data symbol into a first bit symbol;   changing the second read data symbols into second bit symbols; and   comparing the first bit symbol and the second bit symbols to determine the logical value of the observation memory cell.

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