Vapor deposition apparatus

Abstract

A vapor deposition apparatus that includes a first region having a first injecting unit for injecting a first raw material and a second region having a second injecting unit for injecting a second raw material, wherein the second injecting unit comprises a plasma generation unit, wherein the plasma generation unit comprises a plasma generator, a corresponding surface surrounding the plasma generator, and a plasma generation space formed between the plasma generator and the corresponding surface, and wherein distances between the plasma generator and the corresponding surface periodically vary along an outer circumference of the plasma generator. In the vapor deposition apparatus, the quality of thin film is increased by forming stable volume plasma through set positions where the plasma is generated in the plasma generation space.

What is claimed is: 
     
         1 . A vapor deposition apparatus comprising:
 a first region having a first injecting unit configured to inject a first raw material; and   a second region having a second injecting unit configured to inject a second raw material,   wherein:   the second injecting unit comprises a plasma generation unit,   the plasma generation unit comprises a plasma generator, a corresponding surface surrounding the plasma generator, and a plasma generation space formed between the plasma generator and the corresponding surface, and   distances between the plasma generator and the corresponding surface periodically vary along an outer circumference of the plasma generator.   
     
     
         2 . The vapor deposition apparatus of  claim 1 , wherein a plurality of protrusions are formed on a surface of the plasma generator, and the protrusions form a regular pattern. 
     
     
         3 . The vapor deposition apparatus of  claim 1 , wherein a plurality of protrusions are formed on the corresponding surface, and the protrusions form a regular pattern. 
     
     
         4 . The vapor deposition apparatus of  claim 1 , wherein a plurality of first protrusions are formed on a surface of the plasma generator and a plurality of second protrusions are formed on the corresponding surface, wherein the first protrusions and the second protrusions form a regular pattern. 
     
     
         5 . The vapor deposition apparatus of  claim 4 , wherein the first protrusions and the second protrusions are located to directly face each other. 
     
     
         6 . The vapor deposition apparatus of  claim 4 , wherein the plasma generator is configured to rotate and automatically stop the generation of plasma at a position where the first protrusions and the second protrusions directly face each other. 
     
     
         7 . The vapor deposition apparatus of  claim 4 , wherein the first protrusions and the second protrusions are located alternately. 
     
     
         8 . The vapor deposition apparatus of  claim 1 , wherein the first region comprises a first purging unit configured to inject a purge gas, and a first exhausting unit configured to perform a pumping operation and disposed between the first injecting unit and the first purging unit. 
     
     
         9 . The vapor deposition apparatus of  claim 8 , wherein the first region further comprises a first curtain unit disposed between the first purging unit of the first region and the second injecting unit of the second region. 
     
     
         10 . The vapor deposition apparatus of  claim 1 , wherein the second region comprises a second purging unit configured to inject a purge gas and a second exhausting unit configured to perform a pumping operation and disposed between the second injecting unit and the second purging unit. 
     
     
         11 . The vapor deposition apparatus of  claim 10 , wherein the second region further comprises a second curtain unit, the second purging unit being disposed between the second exhausting unit and the second curtain unit. 
     
     
         12 . The vapor deposition apparatus of  claim 1 , wherein the second injecting unit further comprises a plurality of slits arrayed in one direction and formed to pass the second raw material in a radical form generated in the plasma generation space. 
     
     
         13 . A vapor deposition apparatus comprising:
 a plurality of first regions, each of the plurality of first regions comprises a first injecting unit configured to inject a first raw material, a first purging unit configured to inject a purge gas, and a first exhausting unit configured to perform a pumping operation and disposed between the first injecting unit and the first purging unit; and   a plurality of second regions, each of the plurality of second regions comprises a second injecting unit configured to inject a second raw material, a second purging unit configured to inject a purge gas, and a second exhausting unit configured to perform a pumping operation and disposed between the second injecting unit and the second purging unit,   wherein:   the second injecting unit comprises a plasma generation unit,   the plasma generation unit comprises a plasma generator, a corresponding surface surrounding the plasma generator, and a plasma generation space formed between the plasma generator and the corresponding surface, and   protrusions are formed on at least one of a surface of the plasma generator or the corresponding surface.   
     
     
         14 . The vapor deposition apparatus of  claim 13 , wherein the protrusions form a regular pattern. 
     
     
         15 . The vapor deposition apparatus of  claim 13 , wherein the protrusions comprise first protrusions formed on the surface of the plasma generator, and second protrusions formed on the corresponding surface, and wherein the first protrusions and the second protrusions form a regular pattern. 
     
     
         16 . The vapor deposition apparatus of  claim 15 , wherein the first protrusions and the second protrusions are formed to directly face each other. 
     
     
         17 . The vapor deposition apparatus of  claim 15 , wherein the plasma generator is configured to rotate and automatically stop the generation of plasma at a position where the first protrusions and the second protrusions directly face each other. 
     
     
         18 . The vapor deposition apparatus of  claim 15 , wherein the first protrusions and the second protrusions are located alternately. 
     
     
         19 . The vapor deposition apparatus of  claim 13 , wherein the second injecting unit further comprises a plurality of slits arrayed in one direction and configured to pass the second raw material in a radical form generated in the plasma generation space. 
     
     
         20 . The vapor deposition apparatus of  claim 13 , further comprising:
 a first curtain unit disposed between the first purging unit of the first region and the second injecting unit of the second region; and   a second curtain unit disposed between the second purging unit of the second region and the first injecting unit of the first region.   
     
     
         21 . The vapor deposition apparatus of  claim 13 , wherein the first regions and the second regions are alternately disposed with each other.