Plasma processing apparatus and plasma processing method

Abstract

A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. An upper portion includes a tray support surface supporting a lower surface of the tray, substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement portion. During carrying of the substrate, the outer peripheral edge of the lower surface of the substrate is supported by the substrate accommodation hole. During processing of the substrate, the substrate support portion is accommodated in the concave portion.

1 . A plasma processing apparatus, comprising:
 a depressurizeable chamber;   a tray adapted to be carried in and out to the chamber, formed with a plurality of substrate accommodation holes penetrating through thickness thereof, and provided with a substrate support portion for each of the substrate accommodation holes that supports an outer peripheral edge of a lower surface of the substrate accommodated in the substrate accommodation hole;   an upper portion arranged in the chamber and provided with a tray support portion for supporting a lower surface of the tray that supports the substrates carried into the chamber, a plurality of substrate placement portions on each of which a lower surface of the substrate to be placed, and a concave portion for accommodating the substrate support portion;   an electrostatic attraction electrode for electrically attracting at least the substrate to the substrate placement portion;   a dc voltage applying mechanism for applying a dc voltage to the electrostatic attraction electrode; and   a heat conducting gas supply mechanism for supplying a heat conduction gas to a space between the substrate and the substrate placement portion,   wherein, during carrying of the substrate, the outer peripheral edge of the lower surface of the substrate accommodated in the substrate accommodation hole is supported by the substrate accommodation hole, and   wherein, during processing of the substrate, the lower surface of the tray is supported by the tray support portion of the upper portion, the lower surface of the substrate is placed on the substrate placement portion so that the substrate is above the substrate support portion, and the substrate support portion is accommodated in the concave portion.   
     
     
         2 . The plasma processing apparatus according to  claim 1 , wherein the concave portion is a receiving groove formed in the substrate support portion. 
     
     
         3 . The plasma processing apparatus according to  claim 2 , further comprising a cooling mechanism for circulating a refrigerant in a lower portion on which the upper portion is arranged. 
     
     
         4 . The plasma processing apparatus according to  claim 3 , wherein the electrostatic attraction electrode is provided for each of the substrate placement portions, and
 wherein the plasma processing apparatus further comprises a high-frequency voltage applying mechanism for applying a high frequency voltage to each of the electrostatic attraction electrodes so as to be superimposed on the dc voltage.   
     
     
         5 . The plasma processing apparatus according to  claim 3 , wherein the electrostatic attraction electrode is provided for each of the substrate placement portions, and
 wherein the plasma processing apparatus further comprises:   a plurality of second electrodes embedded in the upper portion, insulated from the electrostatic attraction electrodes, and respectively provided for each of the substrate support portions; and   a high-frequency voltage applying mechanism for applying a high frequency voltage to the second electrodes.