Integrated plasmonic sensing device and apparatus

Abstract

An integrated plasmonic sensing device is monolithically integrated and provides marker-free detection (eliminating the need to use fluorescent or absorbing markers) and in-situ monitoring of conditions at each detection region. The integrated plasmonic sensing device includes a plasmonic backplane disposed on a monolithically integrated image sensor. One or more plasmonic scattering regions and one or more plasmonic via regions laterally offset from the plasmonic scattering regions are provided in the plasmonic sensing device. Guided plasmonic modes mediate power transfer through the plasmonic backplane to one or more underlying image sensor pixels.

1 . A sensor comprising:
 a plurality of measurement regions supporting changes in surface plasmon excitation in response to incident light at each measurement region,   a plurality of photodetectors, with each photodetector connected to one or more measurement regions by plasmon vias capable of supporting guided plasmons, and   wherein the plurality of measurement regions and plurality of photodetectors are monolithically integrated and together form an integrated sensor capable of producing electrical signals in response to molecular recognition events at each measurement region.   
     
     
         2 . A sensor in accordance with  claim 1  wherein the plurality of photodetectors together comprise an image sensor formed in a semiconductor substrate and the plurality of measurement regions form part of a plasmonic backplane located between a fluid chamber and the plurality of photodetectors. 
     
     
         3 . A sensor in accordance with  claim 1  wherein more than one of the plurality of photodetectors are connected to one of the plurality of measurement regions by one or more plasmon vias. 
     
     
         4 . A sensor in accordance with  claim 1  wherein more than one of the plurality of measurement regions are connected to one of the plurality of photodetectors by one or more plasmon vias. 
     
     
         5 . A sensor in accordance with  claim 1  wherein at least some of the plurality of measurement regions are laterally offset from and connected to one or more photodetectors by one or more plasmon vias. 
     
     
         6 . A sensor in accordance with  claim 1  wherein at least some of the plurality of measurement regions include plasmonic scattering features. 
     
     
         7 . A sensor in accordance with  claim 1  wherein a fluid chamber is formed over a plasmonic backplane defining at least some of the plurality of measurement regions, and wherein the fluid chamber is at least partially transparent to allow incident light directed through the fluid chamber to contact the measurement regions on the plasmonic backplane. 
     
     
         8 . A sensor in accordance with  claim 1  wherein a fluid chamber for containment of biological or chemical substances under test is formed around one or more of the plurality of measurement regions, and wherein the measurement regions include tethered molecules for molecular recognition of the biological or chemical substances under test. 
     
     
         9 . A method of manufacturing a sensor comprising the steps of:
 providing a substrate including a plurality of photodetectors,   monolithically forming a plasmonic backplane having a plurality of measurement regions over at least some of the plurality of photodetectors, with the plasmonic backplane supporting plasmonic scattering features defined with a first dielectric layer and first metal layer, and   defining plasmon vias that connect the plasmonic scattering features to the plurality of photodetectors.   
     
     
         10 . A method of manufacturing a sensor in accordance with  claim 9 , further comprising the step of forming a fluid chamber over the plasmonic backplane. 
     
     
         11 . A method of manufacturing a sensor in accordance with  claim 9 , further comprising the step of connecting more than one of the plurality of photodetectors to one of the plurality of measurement regions by one or more plasmon vias. 
     
     
         12 . A method of manufacturing a sensor in accordance with  claim 9 , further comprising the step of connecting more than one of the plurality of measurement regions to one of the plurality of photodetectors by one or more plasmon vias. 
     
     
         13 . A method of manufacturing a sensor in accordance with  claim 9 , further comprising the step of positioning at least some of the plurality of measurement regions laterally offset from and connected to one or more photodetectors by one or more plasmon vias. 
     
     
         14 . A method of manufacturing a sensor in accordance with  claim 9 , further comprising the step of attaching tethered molecules for molecular recognition of biological or chemical substances to at least some of the plurality of measurement regions. 
     
     
         15 . The sensor of  claim 1 , wherein tethered molecules for molecular recognition of biological or chemical substances are attached to at least some of the plurality of measurement regions.