Manufacturing Method of Submount

Abstract

A submount and a manufacturing method thereof are provided. The submount, on which at least a semiconductor die is disposed, is mounted on a circuit board. The submount includes a substrate made of a conductive material or a semiconducting material, a plurality of conductive film patterns, and an insulating film pattern. A surface of the substrate includes a die-bonding area and a plurality of conductive areas. The conductive film patterns are individually distributed in the respective conductive areas. The insulating film pattern is disposed between the conductive film pattern and the insulating film pattern, but is not disposed in the die-bonding area. Furthermore, the semiconductor die is disposed in the die-bonding area and is electrically connected with the conductive film patterns. Because the insulating film pattern is not being disposed in the die-bonding area of the submount, the submount structure has improved heat transfer efficiency.

What is claimed is: 
     
         1 . A manufacturing method of a submount for mounting a semiconductor die, comprising:
 (a) providing a substrate, the substrate substantially made of a conductive material or a semiconducting material, and a surface of the substrate comprising a die-mounting area and a plurality of conductive areas;   (b) forming an insulating film pattern on the substrate, and the insulating film pattern being not disposed in the die-mounting area;   (c) forming a plurality of conductive film patterns, and each conductive film pattern is disposed in one respective conductive area;   (d) mounting a semiconductor die on the die-mounting area; and   (e) electrically connecting the semiconductor die and the conductive film patterns;   wherein the substrate comprises a plurality of through holes and a cavity, the through holes are passed through the substrate and are disposed on respective conductive areas, some parts of the conductive film patterns are disposed on the side walls of the through holes, the cavity is located on the die-mounting area and integrally formed on the substrate, and the semiconductor die is located in the cavity.   
     
     
         2 . The manufacturing method of  claim 1 , wherein in step (b), the insulating film pattern is formed on the substrate by using an electrochemical plating method, an electrophoresis method, or an electrochemical deposition method. 
     
     
         3 . The manufacturing method of  claim 1 , wherein the conductive area comprises a first conductive area and a second conductive area, the conductive film pattern comprises a first conductive film pattern and a second conductive film pattern, the first conductive film pattern and the second conductive film pattern are each disposed in the first conductive area and the second conductive area, respectively, and the semiconductor die is a light emitting diode. 
     
     
         4 . The manufacturing method of  claim 3 , wherein before step (d), the manufacturing method further comprising:
 forming a third conductive film pattern on the die-mounting area.   
     
     
         5 . The manufacturing method of  claim 3 , wherein step (c) further comprises the following steps:
 (c1) forming a seed layer;   (c2) growing a conductive film on the seed layer by using an electrochemical plating method, an electrophoresis method, or an electrochemical deposition method.   
     
     
         6 . The manufacturing method of  claim 5 , wherein in the (c1) step, the seed layer is formed by using an immersion plating method or a sputtering deposition method. 
     
     
         7 . The manufacturing method of  claim 1 , wherein the material of the substrate is copper, aluminum, or an alloy comprising copper or aluminum. 
     
     
         8 . The manufacturing method of  claim 1 , wherein the material of the substrate is silicon. 
     
     
         9 . The manufacturing method of  claim 1 , wherein the material of the conductive film pattern is substantially comprised of copper, nickel, aurum, silver, or an alloy comprising copper, nickel, aurum, or silver. 
     
     
         10 . The manufacturing method of  claim 1 , wherein the material of the insulating film pattern is a polymer. 
     
     
         11 . The manufacturing method of  claim 1 , wherein the material of the insulating film pattern is epoxy resin, silicone, polyimide, or solder mask. 
     
     
         12 . The manufacturing method of  claim 1 , wherein the thickness of the insulating film is larger than 2 μm. 
     
     
         13 . The manufacturing method of  claim 1 , wherein in the step (b), the insulating film pattern is made by using a printing method, a sputtering deposition method, or a spraying method.