Semiconductor structure

Abstract

One or more embodiments relate to a semiconductor structure, comprising: a silicon rubber layer; and a semiconductor layer overlying the silicon rubber layer.

What is claimed is: 
     
         1 . A semiconductor structure, comprising:
 a silicone rubber layer; and   a semiconductor layer overlying said silicone layer.   
     
     
         2 . The structure of  claim 1 , wherein said semiconductor layer comprises monocrystalline silicon. 
     
     
         3 . The structure of  claim 1 , further comprising a device, at least a portion of said device disposed within said semiconductor layer and/or at least a portion of said device disposed over said semiconductor layer. 
     
     
         4 . The structure of  claim 3 , wherein said device is a lateral device. 
     
     
         5 . The structure of  claim 1 , wherein said semiconductor layer is in direct contact with said silicone rubber layer. 
     
     
         6 . A semiconductor structure, comprising:
 a dielectric layer having a thickness of at least about 25 microns; and   a semiconductor layer overlying said dielectric layer.   
     
     
         7 . The structure of  claim 8 , wherein said semiconductor layer comprises bulk moncrystalline silicon. 
     
     
         8 . The structure of  claim 8 , further comprising a device, at least a portion of said device disposed within said semiconductor layer and/or at least a portion of said device disposed over a front side of said semiconductor layer. 
     
     
         9 . The structure of  claim 8 , wherein said device is a lateral device. 
     
     
         10 . The structure of  claim 6 , wherein said dielectric layer has a thickness of at least about 50 microns. 
     
     
         11 . The structure of  claim 6 , wherein said dielectric layer is a solid material. 
     
     
         12 . The structure of  claim 6 , wherein said semiconductor layer is in direct contact with said dielectric layer. 
     
     
         13 . The structure of  claim 6 , wherein dielectric layer comprises silicon rubber.