Polymeric material, method of forming the polymeric material, and method of forming a thin film using the polymeric material

Abstract

An organic semiconductor device includes a thin film comprising a polycyclic aromatic compound in a polymer matrix, the thin film including a substantially uniform thickness, such that a thickness of the thin film varies by no greater than 1.0 micrometer over the thin film.

What is claimed is: 
     
         1 . An organic semiconductor device, comprising:
 a thin film comprising a polycyclic aromatic compound in a polymer matrix,   wherein the thin film comprises a substantially uniform thickness, such that a thickness of the thin film varies by no greater than 1.0 micrometer over the thin film.   
     
     
         2 . The organic semiconductor device of  claim 1 , wherein the polycyclic aromatic compound comprises a member selected from the group consisting of oligothiophene, perylene, benzo[ghi]perylene, coronene and polyacene. 
     
     
         3 . The organic semiconductor device of  claim 1 , wherein the polycyclic aromatic compound comprises a member selected from the group consisting of pentacene, tetracene and hexacene. 
     
     
         4 . The organic semiconductor device of  claim 1 , wherein the device comprises a thin film transistor. 
     
     
         5 . The organic semiconductor device of  claim 4 , wherein the thin film transistor comprises a channel region including the thin film. 
     
     
         6 . The organic semiconductor device of  claim 4 , wherein the thin film transistor comprises:
 a dielectric material formed on a substrate; and   plural contacts formed on the dielectric material,   wherein the thin film comprising a polycyclic aromatic compound in a polymer matrix is formed on the dielectric material, and includes a channel region of the thin film transistor.   
     
     
         7 . The organic semiconductor device of  claim 1 , wherein the thin film has a thickness in a range from about 5 nm to 200 nm. 
     
     
         8 . The organic semiconductor device of  claim 1 , wherein the thin film has a thickness in a range from about 10 nm to about 50 nm. 
     
     
         9 . The organic semiconductor device of  claim 1 , wherein the thin film of polycyclic aromatic compound in a polymer matrix comprises a thin film of pentacene in a polystyrene matrix. 
     
     
         10 . A thin film for an organic semiconductor device, the thin film comprising:
 a polycyclic aromatic compound in a polymer matrix.   
     
     
         11 . The thin film of  claim 10 , wherein the polycyclic aromatic compound comprises a member selected from the group consisting of oligothiophene, perylene, benzo[ghi]perylene, coronene and polyacene. 
     
     
         12 . The thin film of  claim 10 , wherein the polycyclic aromatic compound comprises a member selected from the group consisting of pentacene, tetracene and hexacene. 
     
     
         13 . The thin film of  claim 10 , wherein the polycyclic aromatic compound in a polymer matrix comprises pentacene in a polystyrene matrix. 
     
     
         14 . The thin film of  claim 10 , wherein the organic semiconductor device comprises a thin film transistor, and the thin film transistor comprises a channel region including the thin film. 
     
     
         15 . A method of forming an organic semiconductor device, comprising:
 forming a dielectric material on a substrate;   forming plural contacts on the dielectric material; and   forming a thin film comprising a polycyclic aromatic compound in a polymer matrix on the dielectric material, the thin film comprising a substantially uniform thickness, such that a thickness of the thin film varies by no greater than 1.0 micrometer over the thin film.   
     
     
         16 . The method of  claim 15 , wherein the device comprises a thin film transistor and the forming of the thin film comprises forming a channel region of the thin film transistor. 
     
     
         17 . The method of  claim 15 , wherein the forming of the thin film comprises:
 depositing a solution comprising a polymeric material with a pendant polycyclic aromatic compound precursor onto the dielectric material;   removing a solvent from the deposited solution to form a thin film of the polymeric material with a pendant polycyclic aromatic compound precursor; and   heating the substrate to form the thin film comprising a polycyclic aromatic compound in a polymer matrix.