Switch device and crossbar memory array using same

Abstract

A switch device used in a crossbar memory array having a non-volatile memory includes: a laminated body formed of a semiconductor film and an insulating film laminated on the semiconductor film; and a pair of electrode layers having the laminated body therebetween. The semiconductor film is made of a semiconductor material having an I-V characteristic with a negative resistance region.

What is claimed is: 
     
         1 . A switch device used in a crossbar memory array having a non-volatile memory, the switch device comprising:
 a laminated body formed of a semiconductor film and an insulating film laminated on the semiconductor film, the semiconductor film made of a semiconductor material having an I-V characteristic with a negative resistance region; and   a pair of electrode layers having the laminated body therebetween.   
     
     
         2 . The switch device of  claim 1 , wherein the semiconductor film is made of chalcogenide. 
     
     
         3 . The switch device of  claim 2 , wherein the chalcogenide is GeSbTe. 
     
     
         4 . The switch device of  claim 1 , wherein the insulating film is an oxide film. 
     
     
         5 . The switch device of  claim 4 , wherein the oxide film is an SiO 2  film. 
     
     
         6 . The switch device of  claim 2 , wherein the insulating film is an oxide film. 
     
     
         7 . The switch device of  claim 6 , wherein the oxide film is an SiO 2  film. 
     
     
         8 . The switch device of  claim 3 , wherein the insulating film is an oxide film. 
     
     
         9 . The switch device of  claim 8 , wherein the oxide film is an SiO 2  film. 
     
     
         10 . The switch device of  claim 1 , wherein the semiconductor film is formed by ALD. 
     
     
         11 . A crossbar memory array, comprising:
 a plurality of first wirings provided parallel to each other;   a plurality of second wirings provided parallel to each other and orthogonal to the first wirings when seen from the top; and   a plurality of layered structures provided at orthogonal intersections between the first wirings and the second wirings, each including a non-volatile memory device and a switch device stacked on the non-volatile memory device, wherein the switch device includes:   a laminated body formed of a semiconductor film and an insulating film laminated on the semiconductor film, the semiconductor film made of a semiconductor material having an I-V characteristic with a negative resistance region; and   a pair of electrode layers having the laminated body therebetween.   
     
     
         12 . The crossbar memory array of  claim 11 , wherein the non-volatile memory device has a memory layer made of phase-change material. 
     
     
         13 . The crossbar memory array of  claim 12 , wherein the semiconductor film of the switch device and the memory layer of the non-volatile memory device are formed of chalcogenide. 
     
     
         14 . The crossbar memory array of  claim 13 , wherein the chalcogenide is GeSbTe. 
     
     
         15 . The crossbar memory array of  claim 11 , wherein the semiconductor film of the switch device and the memory layer of the non-volatile memory device are formed by ALD.