US2014030897A1PendingUtilityA1

Polishing composition and polishing method using the same

Assignee: TERAMOTO MASASHIPriority: Feb 3, 2011Filed: Feb 2, 2012Published: Jan 30, 2014

Est. expiryFeb 3, 2031(~4.5 yrs left)· nominal 20-yr term from priority

Inventors:Masashi Teramoto Shinichi Ogata Ryuichi Tanimoto

H10P 90/129H10P 50/642H10P 52/00C09G 1/04C09G 1/02C09K 3/14H01L 21/30604

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Claims

Abstract

Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 μm/min can be achieved.

Claims

exact text as granted — not AI-modified

1 . A polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition comprising:
 a polishing accelerator including an amine compound or an inorganic alkaline compound;   a water-soluble polymer; and   a block-type compound in which an oxyethylene group and an oxypropylene group are included in a block-type polyether.   
     
     
         2 . The polishing composition according to  claim 1 , further comprising:
 a pH buffer including a carbonate and a hydrogencarbonate.   
     
     
         3 . A polishing method for polishing a silicon wafer using the polishing composition according to  claim 1 .

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