US2014030875A1PendingUtilityA1

Method for forming compound epitaxial layer by chemical bonding and epitaxy product made by the same method

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Assignee: LIN HUEY JEANPriority: Jul 5, 2012Filed: Sep 26, 2013Published: Jan 30, 2014
Est. expiryJul 5, 2032(~5.9 yrs left)· nominal 20-yr term from priority
Inventors:Kuo-Wei Shyu
H10P 14/418H10P 14/43H10P 14/24C30B 25/18C23C 16/4554C30B 25/186C23C 16/34C30B 29/38H01L 21/0262
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Claims

Abstract

The present invention is to provide a method for forming a compound epitaxial layer by chemical bonding, which comprises the steps of forming a contact layer on a substrate; chemically reacting atoms on a surface of the contact layer with non-metal atoms, such that the non-metal atoms form non-metal ions for chemically bonding to the atoms on the surface of the contact layer; exciting the non-metal ions by energy excitation, such that unpaired electrons of the non-metal ions not yet bound to the atoms on the surface of the contact layer become dangling bonds; and conducting chemical vapor deposition by introducing an organic metal compound and a reactant gas, wherein metal ions of the organic metal compound are bound to the dangling bonds by electric dipole attraction, and anions of the reactant gas are bound to the metal ions by ionic bonding, such that the compound epitaxial layer is formed.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method for forming a compound epitaxial layer by chemical bonding, comprising the steps of:
 forming a contact layer on a substrate;   chemically reacting atoms on a surface of the contact layer with non-metal atoms at a temperature of 200° C. or above, such that the non-metal atoms form non-metal ions, the non-metal ions being bound to the atoms on the surface of the contact layer by chemical bonding and thus forming an unsaturated ionic bond layer on the surface of the contact layer;   exciting the non-metal ions by energy excitation, such that unpaired electrons of the non-metal ions that have not been bound to the atoms on the surface of the contact layer become dangling bonds; and   conducting chemical vapor deposition by introducing an organic metal compound and a reactant gas, wherein metal ions of the organic metal compound are guided by electric dipole attraction of the dangling bonds and bound to the dangling bonds, and wherein anions of the reactant gas are bound to the metal ions by ionic bonding, such that a compound epitaxial layer is formed.   
     
     
         2 . The method of  claim 1 , wherein the contact layer is a metal layer made of titanium, tantalum, aluminum, zinc, scandium, zirconium or magnesium. 
     
     
         3 . The method of  claim 1 , wherein the contact layer is an amphoteric-element layer made of boron or silicon. 
     
     
         4 . The method of  claim 2 , wherein the non-metal atoms chemically reacting with the atoms on the surface of the contact layer are nitrogen, phosphorus, oxygen or sulfur atoms. 
     
     
         5 . The method of  claim 3 , wherein the non-metal atoms chemically reacting with the atoms on the surface of the contact layer are nitrogen, phosphorus, oxygen or sulfur atoms. 
     
     
         6 . The method of  claim 4 , wherein the reactant gas is ammonia, phosphine, water, hydrogen sulfide or arsine so as to produce a said compound epitaxial layer containing the element nitrogen, phosphorus, oxygen, sulfur or arsenic. 
     
     
         7 . The method of  claim 5 , wherein the reactant gas is ammonia, phosphine, water, hydrogen sulfide or arsine so as to produce a said compound epitaxial layer containing the element nitrogen, phosphorus, oxygen, sulfur or arsenic. 
     
     
         8 . The method of  claim 6 , wherein the organic metal compound is tetrakis(dimethylamido)titanium. 
     
     
         9 . The method of  claim 7 , wherein the organic metal compound is tetrakis(dimethylamido)titanium. 
     
     
         10 . The method of  claim 8 , wherein the substrate is a silicon wafer or is made of fused quartz, copper-molybdenum alloy, tungsten or titanium. 
     
     
         11 . The method of  claim 9 , wherein the substrate is a silicon wafer or is made of fused quartz, copper-molybdenum alloy, tungsten or titanium. 
     
     
         12 . The method of  claim 10 , wherein the step of exciting the non-metal ions comprises exciting the non-metal ions by laser excitation. 
     
     
         13 . The method of  claim 11 , wherein the step of exciting the non-metal ions comprises exciting the non-metal ions by laser excitation. 
     
     
         14 . The method of  claim 10 , wherein the step of exciting the non-metal ions comprises exciting the non-metal ions by thermal excitation. 
     
     
         15 . The method of  claim 11 , wherein the step of exciting the non-metal ions comprises exciting the non-metal ions by thermal excitation.

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