Method of manufacturing semiconductor device having cylindrical lower capacitor electrode

Abstract

To provide a semiconductor device including: plural capacitors each including a cylindrical lower electrode having an internal wall and an external wall, and an upper electrode that covers the external wall of the lower electrode via a capacitance dielectric film; and a supporting film having a buried portion buried in an internal region surrounded by the internal wall of the lower electrode, and a supporting portion a part of which is positioned within the internal region and remaining parts of which are positioned at outside of the internal region. The supporting portion sandwiches an upper end of the lower electrode at both ends of the upper end by covering the internal wall and the external wall of the upper end of the lower electrode.

What is claimed is: 
     
         1 . A method of forming a semiconductor device comprising:
 forming a first cylindrical lower electrode over a semiconductor substrate;   forming a first insulating supporting film to support the first cylindrical lower electrode;   forming a second cylindrical lower electrode on the first cylindrical lower electrode;   forming a second insulating supporting film to support the second cylindrical lower electrode;   forming a dielectric film on external walls of the first and second cylindrical lower electrodes; and   forming an upper electrode formed on the dielectric film.   
     
     
         2 . The method of  claim 1 , further comprising burying the first insulating supporting film inside the first cylindrical lower electrode. 
     
     
         3 . The method of  claim 1 , further comprising providing the first insulating supporting film with a structure that sandwiches an internal wall and the external wall of the first cylindrical lower electrode. 
     
     
         4 . The method of  claim 1 , further comprising burying the second insulating supporting film inside the second cylindrical lower electrode. 
     
     
         5 . The method of  claim 1 , further comprising providing the second insulating supporting film with a structure which sandwiches an internal wall and the external wall of the second cylindrical lower electrode. 
     
     
         6 . The method of  claim 1 , further comprising forming the upper electrode on an internal wall of the second cylindrical lower electrode. 
     
     
         7 . The method of  claim 1 , further comprising providing an interlayer insulating film that covers the external wall of a lower end region of the first cylindrical lower electrode, wherein the interlayer insulating film and the first and second insulating supporting films are made of a same material.