US2014025879A1PendingUtilityA1

Dynamic random access memory applied to an embedded display port

Assignee: ETRON TECHNOLOGY INCPriority: Jul 17, 2012Filed: Jun 19, 2013Published: Jan 23, 2014
Est. expiryJul 17, 2032(~6 yrs left)· nominal 20-yr term from priority
G11C 11/4074G06F 12/063G06F 13/4278G06F 12/0866G11C 11/40615G06F 3/0656Y02D10/00G06F 12/0882G06F 3/061G06F 13/4221G06F 3/0653G11C 7/1075G06F 12/0692G06F 12/0238
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Claims

Abstract

A dynamic random access memory applied to an embedded display port includes a memory core unit, a peripheral circuit unit, and an input/output unit. The memory core unit is used for operating in a first predetermined voltage. The peripheral circuit unit is electrically connected to the memory core unit for operating in a second predetermined voltage, where the second predetermined voltage is lower than 1.1V. The input/output unit is electrically connected to the memory core unit and the peripheral circuit unit for operating in a third predetermined voltage, where the third predetermined voltage is lower than 1.1V.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A dynamic random access memory applied to an embedded display port, the dynamic random access memory comprising:
 a memory core unit for operating in a first predetermined voltage; and   a peripheral circuit unit electrically connected to the memory core unit for operating in a second predetermined voltage, wherein the second predetermined voltage is lower than 1.1V.   
     
     
         2 . The dynamic random access memory of  claim 1 , wherein the first predetermined voltage is lower than 1.1V. 
     
     
         3 . The dynamic random access memory of  claim 2 , further comprising:
 an input/output unit electrically connected to the peripheral circuit unit and the memory core unit for operating in a third predetermined voltage, wherein the third predetermined voltage is lower than 1.1V.   
     
     
         4 . The dynamic random access memory of  claim 1 , wherein the first predetermined voltage is equal to 1.8V±0.1V. 
     
     
         5 . The dynamic random access memory of  claim 4 , further comprising:
 an input/output unit electrically connected to the peripheral circuit unit and the memory core unit for operating in a third predetermined voltage, wherein the third predetermined voltage is lower than 1.1V.   
     
     
         6 . A dynamic random access memory applied to an embedded display port, the dynamic random access memory comprising:
 a memory core unit for operating in a first predetermined voltage;   a peripheral circuit unit electrically connected to the memory core unit for operating in a second predetermined voltage, wherein the second predetermined voltage is lower than 1.1V; and   an input/output unit electrically connected to the peripheral circuit unit and the memory core unit for operating in a third predetermined voltage, wherein the third predetermined voltage is lower than 1.1V.   
     
     
         7 . The dynamic random access memory of  claim 6 , wherein the first predetermined voltage is lower than 1.1V. 
     
     
         8 . The dynamic random access memory of  claim 6 , wherein the first predetermined voltage is equal to 1.8V±0.1V.

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