Producing method of semiconductor device

Abstract

A method for producing a semiconductor device includes a preparing step of preparing a board formed with a concave portion, a terminal disposed in or around the concave portion, and a semiconductor element disposed in the concave portion; a wire-bonding step of connecting the terminal to the semiconductor element with a wire; a pressure-welding step of pressure-welding an encapsulating sheet to the board so as to be in close contact with the upper surface of a portion around the concave portion and to be separated from the upper surface of the concave portion under a reduced pressure atmosphere; and an atmosphere releasing step of releasing the board and the encapsulating sheet under an atmospheric pressure atmosphere.

What is claimed is: 
     
         1 . A method for producing a semiconductor device comprising:
 a preparing step of preparing a board formed with a concave portion, a terminal disposed in or around the concave portion, and a semiconductor element disposed in the concave portion;   a wire-bonding step of connecting the terminal to the semiconductor element with a wire;   a pressure-welding step of pressure-welding an encapsulating sheet to the board so as to be in close contact with the upper surface of a portion around the concave portion and to be separated from the upper surface of the concave portion under a reduced pressure atmosphere; and   an atmosphere releasing step of releasing the board and the encapsulating sheet under an atmospheric pressure atmosphere.   
     
     
         2 . The method for producing a semiconductor device according to  claim 1 , wherein
 after the atmosphere releasing step, a two-step heating step in which heating is performed at a first temperature and thereafter, heating is performed at a second temperature that is higher than the first temperature is further included.   
     
     
         3 . The method for producing a semiconductor device according to  claim 2 , wherein
 the first temperature has a heating temperature range in which the temperature increases to the second temperature.   
     
     
         4 . The method for producing a semiconductor device according to  claim 2 , wherein
 in the two-step heating step, the encapsulating sheet is mechanically pressurized when heated at the first temperature.   
     
     
         5 . The method for producing a semiconductor device according to  claim 2 , wherein
 the encapsulating sheet is prepared from an encapsulating resin composition containing a two-step thermosetting resin, and   in the two-step heating step, the encapsulating sheet is in a B-stage state when heated at the first temperature and the encapsulating sheet is in a C-stage state when heated at the second temperature.   
     
     
         6 . The method for producing a semiconductor device according to  claim 1 , wherein
 after the atmosphere releasing step, a heating and fluid-pressurizing step in which the encapsulating sheet is heated and fluid-pressurized is further included.   
     
     
         7 . The method for producing a semiconductor device according to  claim 1 , wherein
 in the pressure-welding step, the encapsulating sheet has a compressive elastic modulus of 0.16 MPa or less.   
     
     
         8 . The method for producing a semiconductor device according to  claim 1 , wherein
 the length between the upper surface of the concave portion and the upper surface of the portion around the concave portion is 500 μm or less.