Etching paste, method of preparing the same, and method of forming pattern using the same

Abstract

An etching paste includes an acid compound, an organic binder, a nitrogen-containing component, the nitrogen-containing component including one or more of an amine compound or an ammonium compound, a cobalt aluminum oxide, and a solvent.

What is claimed is: 
     
         1 . An etching paste, comprising:
 an acid compound;   an organic binder;   a nitrogen-containing component, the nitrogen-containing component including one or more of an amine compound or an ammonium compound;   a cobalt aluminum oxide; and   a solvent.   
     
     
         2 . The etching paste as claimed in  claim 1 , wherein the cobalt aluminum oxide is present in an amount of about 1 wt % to about 20 wt % in the etching paste. 
     
     
         3 . The etching paste as claimed in  claim 1 , wherein the cobalt aluminum oxide has an average particle diameter (D50) of about 0.001 μm to about 5 μm 
     
     
         4 . The etching paste as claimed in  claim 1 , wherein a mole ratio of the nitrogen-containing component to the acid compound is about 1 to about 1.5. 
     
     
         5 . The etching paste as claimed in  claim 1 , wherein the nitrogen-containing component includes the amine compound, and the amine compound is represented by Formula 1:
   (R) n —N—H m    [Formula 1]
   wherein, in Formula 1,   R is a substituted or unsubstituted C1 to C12 alkyl group, a substituted or unsubstituted C6 to C12 aryl group, or a substituted or unsubstituted C7 to C15 arylalkyl group,   n is an integer from 1 to 3,   m is an integer from 0 to 2, and   n+m is 3.   
     
     
         6 . The etching paste as claimed in  claim 1 , wherein the nitrogen-containing component includes the ammonium compound, and the ammonium compound is represented by Formula 2:
   (NH 4 ) k X   [Formula 2]
   wherein, in Formula 2,   X is CO 3 , OH, or CO 2 NH 2 , and   k is 1 or 2.   
     
     
         7 . The etching paste as claimed in  claim 1 , wherein the acid compound includes one or more of phosphoric acid, hydrogen fluoride, ammonium fluoride, or ammonium hydrogen fluoride. 
     
     
         8 . The etching paste as claimed in  claim 1 , wherein the organic binder includes one or more of methyl cellulose, ethyl cellulose, hydroxyethyl cellulose, hydroxypropyl cellulose, carboxymethyl cellulose, sodium carboxymethyl cellulose, sodium carboxymethyl hydroxyethyl cellulose, nitrocellulose, xanthan gum, starch, gelatin, polyvinyl butyral, a polyamide resin, thixotron, polyvinylpyrrolidone, polyvinyl alcohol, an acrylic polymer obtained by copolymerization of acrylic monomers having a hydroxyl group or a carboxylic acid group, a water-soluble (meth)acrylic resin, a polyether-polyol, or a poly(ether urea)-polyurethane. 
     
     
         9 . The etching paste according to  claim 1 , wherein the etching paste comprises:
 about 15 wt % to about 50 wt % of the acid compound,   about 3 wt % to about 20 wt % of the organic binder,   about 0.1 wt % to about 10 wt % of the nitrogen-containing component,   about 1 wt % to about 20 wt % of the cobalt aluminum oxide, and   a balance of the solvent.   
     
     
         10 . The etching paste as claimed in  claim 1 , further comprising one or more of an organic acid, inorganic particles, a foaming agent, a leveling agent, an antifoaming agent, a thickener, a thixotropic agent, a plasticizer, a dispersant, a viscosity stabilizer, a UV stabilizer, an antioxidant, or a coupling agent. 
     
     
         11 . The etching paste as claimed in  claim 1 , further comprising inorganic particles, wherein a weight ratio of the cobalt aluminum oxide to the inorganic particles is about 0.1 to about 7. 
     
     
         12 . The etching paste as claimed in  claim 1 , wherein the acid compound includes phosphoric acid, the organic binder includes hydroxypropyl cellulose, the nitrogen-containing component includes one or more of ammonium hydroxide 35% or methylamine, the cobalt aluminum oxide includes CoAl 2 O 4 , and the solvent includes water and n-methylpyrrolidone, the etching paste further comprises acetic acid and silica particles, a weight ratio of the CoAl 2 O 4  to the silica particles is about 0.4 to about 6.5, a mole ratio of the phosphoric acid to the nitrogen-containing component is about 1:1.1 to about 1:1.3, and the etching paste comprises:
 about 25 wt % to about 30 wt % of the phosphoric acid,   about 5 wt % to about 10 wt % of the hydroxypropyl cellulose,   about 0.1 wt % to about 0.5 wt % of the nitrogen-containing component,   about 1 wt % to about 15 wt % of the CoAl 2 O 4 ,   about 1 wt % to about 5 wt % of the acetic acid,   about 1 wt % to about 5 wt % of the silica particles, and   a balance of the solvent.   
     
     
         13 . A method of forming a pattern, the method comprising:
 printing the etching paste as claimed in  claim 1  on a substrate on which an etching target is deposited;   drying the etching paste; and   washing the etching paste to form a pattern in the etching target.   
     
     
         14 . The method as claimed in  claim 13 , wherein the etching target is aluminum or indium tin oxide. 
     
     
         15 . A device comprising a pattern formed by the method as claimed in  claim 13 .