Vertical System Integration

Abstract

The Vertical System Integration (VSI) invention herein is a method for integration of disparate electronic, optical and MEMS technologies into a single integrated circuit die or component and wherein the individual device layers used in the VSI fabrication processes are preferably previously fabricated components intended for generic multiple application use and not necessarily limited in its use to a specific application. The VSI method of integration lowers the cost difference between lower volume custom electronic products and high volume generic use electronic products by eliminating or reducing circuit design, layout, tooling and fabrication costs.

What is claimed is: 
     
         1 . A stacked integrated circuit comprising:
 a plurality of closely-coupled integrated circuit layers in stacked relation to one another;   wherein at least one of the closely-coupled integrated circuit layers is used in at least one stacked integrated circuit of different design.   
     
     
         2 . The stacked integrated circuit of  claim 1 , wherein the plurality of closely-coupled integrated circuit layers include a processing layer and a memory layer. 
     
     
         3 . The stacked integrated circuit of  claim 1 , wherein the plurality of closely-coupled integrated circuit layers include an I/O layer. 
     
     
         4 . The stacked integrated circuit of  claim 3 , wherein the I/O layer performs wireless communications. 
     
     
         5 . The stacked integrated circuit of  claim 3 , wherein the I/O layer performs optical communications. 
     
     
         6 . The stacked integrated circuit of  claim 1 , comprising vertical interconnections formed by bonding the plurality of closely-coupled integrated circuit layers by metal diffusion bonding. 
     
     
         7 . A stacked integrated circuit comprising:
 a plurality of closely-coupled integrated circuit layers in stacked relation to one another; and   a plurality of vertical interconnections in a standardized placement interconnecting at least two of the plurality of closely-coupled integrated circuit layers;   wherein said at least two of the closely-coupled integrated circuit layers are used in at least one different stacked integrated circuit.   
     
     
         8 . The stacked integrated circuit of  claim 7 , wherein the plurality of closely-coupled integrated circuit layers include a processing layer and a memory layer. 
     
     
         9 . The stacked integrated circuit of  claim 7 , wherein the plurality of closely-coupled integrated circuit layers include an I/O layer. 
     
     
         10 . The stacked integrated circuit of  claim 9 , wherein the I/O layer performs wireless communications. 
     
     
         11 . The stacked integrated circuit of  claim 9 , wherein the I/O layer performs optical communications. 
     
     
         12 . The stacked integrated circuit of  claim 7 , comprising vertical interconnections formed by bonding the plurality of closely-coupled integrated circuit layers by metal diffusion bonding.