Semiconductor device and method of fabricating the same

Abstract

Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a charge storage structure and a gate. The charge storage structure is formed on a substrate. The gate is formed on the charge storage structure. The gate includes a lower portion formed of silicon and an upper portion formed of metal silicide. The upper portion of the gate has a width greater than that of the lower portion of the gate.

1 . A semiconductor device comprising:
 a floating gate on a substrate; and   a control gate extending in a first direction, the control gate including a lower portion formed of poly silicon and an upper portion formed of a metal silicide,   wherein the upper portion of the control gate has a height greater than a height of the lower portion of the control gate;   and wherein, with respect to a cross section of the control gate taken in a direction perpendicular to the first direction, the upper portion of the control gate has a width greater than a width of the lower portion of the control gate.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the upper portion of the control gate includes cobalt silicide (CoSix), nickel silicide (NiSix), molybdenum silicide (MoSix), titanium silicide (TiSix), tantalum silicide (TaSix), or a combination thereof. 
     
     
         3 . The semiconductor device of  claim 1 , further comprising:
 a tunnel dielectric layer between the substrate and the floating gate; and   a dielectric layer between the floating gate and the control gate.   
     
     
         4 - 10 . (canceled)