Large Area Patterning of Nano-Sized Shapes

Abstract

Methods for creating nano-shaped patterns are described. This approach may be used to directly pattern substrates and/or create imprint lithography molds that may be subsequently used to directly replicate nano-shaped patterns into other substrates in a high throughput process.

What is claimed is: 
     
         1 . An imprint lithography method of patterning a substrate comprising the steps of:
 providing a substrate;   coating the substrate with an adhesive layer having a thickness of 1 nm or less;   depositing polymerizable material on the adhesive layer;   positioning an imprint lithography template having a relief pattern with sharp edged features in contact with the deposited polymerizable material at a first height relative to the substrate;   moving the imprint lithography template to a second height relative to the substrate to spread the polymerizable material;   solidifying the polymerizable material to form a patterned layer having sharp edged features and a residual layer thickness t R  of less than 5 nm;   separating the imprint lithography template from the formed patterned layer;   directly etching the pattern into the substrate without a descum etching step wherein the etched substrate substantially retains the sharp edged features of the patterned layer.   
     
     
         2 . The method of  claim 1  wherein the adhesive layer is coated onto the substrate by vapor deposition. 
     
     
         3 . The method of  claim 1  wherein the depositing polymerizable material on the adhesive layer further comprises dispensing the polymerizable material as a plurality of droplets. 
     
     
         4 . The method of  claim 1  wherein the imprint template relief pattern further comprises dummy fill features. 
     
     
         5 . An imprint lithography method of patterning a substrate comprising the steps of:
 providing a substrate;   depositing polymerizable material on the substrate;   positioning an imprint lithography template having a relief pattern with sharp edged features in contact with the deposited polymerizable material at a first height relative to the substrate;   moving the imprint lithography template to a second height relative to the substrate to spread the polymerizable material;   solidifying the polymerizable material to form a patterned layer having sharp edged features and a residual layer thickness t R  of less than 5 nm;   separating the imprint lithography template from the formed patterned layer;   directly etching the pattern into the substrate without a descum etching step wherein the etched substrate substantially retains the sharp edged features of the patterned layer.   
     
     
         6 . The method of  claim 5  wherein the depositing polymerizable material on the substrate further comprises dispensing the polymerizable material as a plurality of droplets. 
     
     
         7 . The method of  claim 5  wherein the imprint template relief pattern further comprises dummy fill features. 
     
     
         8 . An imprint lithography method of patterning a substrate comprising the steps of:
 providing a substrate;   depositing polymerizable material on the substrate;   contacting the polymerizable material with an imprint lithography template having a relief pattern with sharp edged features;   solidifying the polymerizable material to form a patterned layer having sharp edged features and a residual layer thickness t R  of less than 5 nm;   separating the imprint lithography template from the formed patterned layer;   directly etching the pattern into the substrate without a descum etching step wherein the etched substrate substantially retains the sharp edged features of the patterned layer.   
     
     
         9 . The method of  claim 8  wherein the depositing polymerizable material on the substrate further comprises dispensing the polymerizable material as a plurality of droplets. 
     
     
         10 . The method of  claim 8  wherein the imprint template relief pattern further comprises dummy fill features.