Semiconductor Device and Method of Forming Electrical Interconnection Between Semiconductor Die and Substrate with Continuous Body of Solder Tape

Abstract

A semiconductor device has a flipchip type semiconductor die with contact pads and substrate with contact pads. A flux material is deposited over the contact pads of the semiconductor die and contact pads of the substrate. A solder tape formed as a continuous body of solder material with a plurality of recesses is disposed between the contact pads of the semiconductor die and substrate. The solder tape is brought to a liquidus state to separate a portion of the solder tape outside a footprint of the contact pads of the semiconductor die and substrate under surface tension and coalesce the solder material as an electrical interconnect substantially within the footprint of the contact pads of the semiconductor die and substrate. The contact pads on the semiconductor die and substrate can be formed with an extension or recess to increase surface area of the contact pads.

What is claimed: 
     
         1 . A semiconductor device, comprising:
 a semiconductor die including a plurality of first contact pads;   a substrate including a plurality of second contact pads; and   a continuous body of conductive material disposed between the first contact pads of the semiconductor die and the second contact pads of the substrate for separation into a plurality of interconnects between the first contact pads and second contact pads upon bringing the continuous body of conductive material to a liquidus state.   
     
     
         2 . The semiconductor device of  claim 1 , further including a plurality of recesses formed in the continuous body of conductive material. 
     
     
         3 . The semiconductor device of  claim 1 , further including an extension or recess formed in the first contact pads of the semiconductor die or the second contact pads of the substrate. 
     
     
         4 . The semiconductor device of  claim 1 , further including an underfill material disposed between the semiconductor die and substrate. 
     
     
         5 . The semiconductor device of  claim 1 , further including a support member disposed over the semiconductor die and substrate. 
     
     
         6 . The semiconductor device of  claim 1 , wherein the continuous body of conductive material includes a conductive tape. 
     
     
         7 . A semiconductor device, comprising:
 a semiconductor die including a plurality of first contact pads;   a substrate including a plurality of second contact pads; and   a body of conductive material disposed across the first contact pads of the semiconductor die and the second contact pads of the substrate.   
     
     
         8 . The semiconductor device of  claim 7 , wherein the body of conductive material is adapted to separate into a plurality of interconnects between the first contact pads and second contact pads upon bringing the body of conductive material to a liquidus state. 
     
     
         9 . The semiconductor device of  claim 7 , further including a plurality of recesses formed in the body of conductive material. 
     
     
         10 . The semiconductor device of  claim 7 , further including an extension or recess formed in the first contact pads of the semiconductor die or the second contact pads of the substrate. 
     
     
         11 . The semiconductor device of  claim 7 , further including an underfill material disposed between the semiconductor die and substrate. 
     
     
         12 . The semiconductor device of  claim 7 , further including a support member disposed over the semiconductor die and substrate. 
     
     
         13 . The semiconductor device of  claim 7 , wherein the semiconductor die includes a flipchip type semiconductor die. 
     
     
         14 . A semiconductor device, comprising:
 a semiconductor die;   a substrate; and   a body of conductive material disposed across the semiconductor die and substrate.   
     
     
         15 . The semiconductor device of  claim 14 , wherein the body of conductive material is adapted to separate into a plurality of interconnects between the semiconductor die and substrate upon bringing the body of conductive material to a liquidus state. 
     
     
         16 . The semiconductor device of  claim 14 , further including a plurality of recesses formed in the body of conductive material. 
     
     
         17 . The semiconductor device of  claim 14 , further including an extension or recess formed in a plurality of first contact pads disposed over the semiconductor die or in a plurality of second contact pads disposed over the substrate. 
     
     
         18 . The semiconductor device of  claim 14 , further including an underfill material disposed between the semiconductor die and substrate. 
     
     
         19 . The semiconductor device of  claim 14 , further including a support member disposed over the semiconductor die and substrate. 
     
     
         20 . A semiconductor device, comprising:
 a first semiconductor component;   a second semiconductor component; and   a body of conductive material disposed across the first semiconductor component and second semiconductor component.   
     
     
         21 . The semiconductor device of  claim 20 , wherein the body of conductive material is adapted to separate into a plurality of interconnects between the first semiconductor component and second semiconductor component upon bringing the body of conductive material to a liquidus state. 
     
     
         22 . The semiconductor device of  claim 20 , further including a plurality of recesses formed in the body of conductive material. 
     
     
         23 . The semiconductor device of  claim 20 , further including an extension or recess formed in a plurality of contact pads of the first semiconductor component. 
     
     
         24 . The semiconductor device of  claim 20 , further including an underfill material disposed between the first semiconductor component and second semiconductor component. 
     
     
         25 . The semiconductor device of  claim 20 , wherein the body of conductive material includes a conductive tape.