Poly silicon resistor, reference voltage circuit comprising the same, and manufacturing method of poly silicon resistor

Abstract

The present invention relates to a polysilicon resistor, a reference voltage circuit including the same, and a method for manufacturing the polysilicon resistor. The polysilicon resistor according includes a first polysilicon resistor and at least one of second polusilicon resistors, coupled to the first polysilicon resistor in series. The first polysilicon resistor and the at least one of the second polysilicon resistors are P-type polysilicon, and a doping concentration of the first polysilicon resistor is different from a doping concentration of the at least one of the second polysilicon resistors. The polysilicon resistor formed by serially coupling the first polysilicon resistor and the at least one of the second polysilicon resistors is applied with a constant current such that a reference voltage or a constant voltage is generated.

1 - 10 . (canceled) 
     
     
         11 . A method for manufacturing a polysilicon resistor, comprising:
 forming polysilicon on an oxide layer that is formed on a substrate;   dividing the polysilicon into a first polysilicon region and a second polysilicon region; and   doping the first polysilicon region and the second polysilicon region,   wherein a doping concentration of the first polysilicon region and a doping concentration of the second polysilicon region are different from each other.   
     
     
         12 . The method for manufacturing the polysilicon resistor of  claim 11 , wherein an area of the doped region of the first polysilicon region and an area of the doped region of the second polyslicon region are different from each other. 
     
     
         13 . The method for manufacturing the polysilicon resistor of  claim 11 ,
 wherein a temperature characteristic of the first polysilicon region by the doping concentration of the first polysilicon region and a temperature characteristic of the second polysilicon region by the doping concentration of the second polysilicon region are opposite to each other.   
     
     
         14 . The method for manufacturing the polysilicon resistor of  claim 11 , wherein the doping of the first polysilicon region and the second polysilicon region comprises doping with P-type impurities. 
     
     
         15 - 16 . (canceled)