Solid-state imaging device, manufacturing method thereof, and camera with alternately arranged pixel combinations

Abstract

A solid-state imaging device includes a semiconductor substrate; a first conductive region of the semiconductor substrate; a first conductive region on an upper surface side of the first conductive region of the semiconductor substrate; a second conductive region below the first conductive region on the upper surface side of the first conductive region of the semiconductor substrate. The solid-state imaging device further includes a photoelectric conversion region including the first conductive region located on the upper surface side of the first conductive region of the semiconductor substrate and the second conductive region and a transfer transistor transferring charges accumulated in the photoelectric conversion region to a readout region; and a pixel including the photoelectric conversion region and the transfer transistor. The first conductive region, which is included in the photoelectric conversion region, extends to the lower side of a sidewall of a gate electrode of the transfer transistor.

What is claimed is: 
     
         1 . A solid-state imaging device comprising:
 a semiconductor substrate;   an epitaxial growth layer being located on the substrate; and   a gate electrode being located in the epitaxial growth layer.   
     
     
         2 . The solid-state imaging device according to the  claim 1 , wherein the gate electrode is a part of a transfer transistor. 
     
     
         3 . The solid-state imaging device according to the  claim 1 , wherein a readout region being formed on the side of the gate electrode located on the epitaxial growth layer. 
     
     
         4 . The solid-state imaging device according to the  claim 1 , wherein a photoelectric conversion region being formed in the semiconductor substrate. 
     
     
         5 . The solid-state imaging device according to the  claim 1 , wherein the gate electrode having sidewalls. 
     
     
         6 . The solid-state imaging device according to the  claim 3 , wherein the readout region is a drain region. 
     
     
         7 . The solid-state imaging device according to the  claim 4 , wherein the photoelectric conversion region is a source region of the transfer transistor. 
     
     
         8 . The solid-state imaging device according to the  claim 7 , wherein the source region having one or more semiconductor regions of the transfer transistor.