Integrated Composite Group III-V and Group IV Semiconductor Device

Abstract

According to one disclosed embodiment, a method for fabricating a monolithic integrated composite device comprises forming a group III-V semiconductor body over a group IV semiconductor substrate, forming a trench in the group III-V semiconductor body, and forming a group IV semiconductor body in the trench. The method also comprises fabricating at least one group IV semiconductor device in the group IV semiconductor body, and fabricating at least one group III-V semiconductor device in the group III-V semiconductor body. In one embodiment, the method further comprises planarizing an upper surface of the III-V semiconductor body and an upper surface of the group IV semiconductor body to render those respective upper surfaces substantially co-planar. In one embodiment, the method further comprises fabricating at least one passive device in a defective region of said group IV semiconductor body adjacent to a sidewall of the trench.

1 - 20 . (canceled) 
     
     
         21 . A monolithic integrated composite device comprising:
 a group IV semiconductor substrate supporting an overlying group III-V semiconductor body;   a trench formed in said group III-V semiconductor body;   a first buried layer having a first conductivity type formed in said trench over said group IV semiconductor substrate;   a second buried layer having a second conductivity type opposite said first conductivity type formed over said first buried layer in said trench;   a group IV semiconductor body formed in said trench over said second buried layer, said group IV semiconductor body including a defective region adjacent a sidewall of said trench.   
     
     
         22 . The monolithic integrated composite device of  claim 21 , wherein said group IV semiconductor body comprises an epitaxial body grown in said trench. 
     
     
         23 . The monolithic integrated composite device of  claim 21 , wherein said group IV semiconductor body comprises silicon. 
     
     
         24 . The monolithic integrated composite device of  claim 21 , wherein said group III-V semiconductor body comprises a plurality of III-nitride semiconductor layers. 
     
     
         25 . The monolithic integrated composite device of  claim 21 , wherein said group III-V semiconductor body comprises a heterojunction formed at an interface of a gallium nitride (GaN) layer and an aluminum gallium nitride (AlGaN) layer. 
     
     
         26 . The monolithic integrated composite device of  claim 21 , further comprising at least one group IV semiconductor device fabricated in said group IV semiconductor body. 
     
     
         27 . The monolithic integrated composite device of  claim 21 , further comprising at least one group III-V semiconductor device fabricated in said group III-V semiconductor body. 
     
     
         28 . A monolithic integrated composite device comprising:
 a silicon substrate supporting an overlying Ill-nitride body;   a trench formed in said III-nitride body;   a first buried layer having a first conductivity type formed in said trench over said silicon substrate;   a second buried layer having a second conductivity type opposite said first conductivity type formed over said first buried layer in said trench;   a silicon device formed in said trench over said second buried layer.   
     
     
         29 . The monolithic integrated composite device of  claim 28  wherein said silicon device is formed in a defective region of a silicon body adjacent a sidewall of said trench. 
     
     
         30 . The monolithic integrated composite device of  claim 29 , wherein said silicon body is epitaxially grown. 
     
     
         31 . The monolithic integrated composite device of  claim 28 , wherein said III-nitride body comprises a plurality of III-nitride layers. 
     
     
         32 . The monolithic integrated composite device of  claim 28 , wherein said III-nitride body comprises a heterojunction formed at an interface of a gallium nitride (GaN) layer and an aluminum gallium nitride (AlGaN) layer. 
     
     
         33 . The monolithic integrated composite device of  claim 28 , further comprising at least one III-nitride device fabricated in said III-nitride body. 
     
     
         34 . A monolithic integrated composite device comprising:
 a silicon substrate supporting an overlying III-nitride body;   a trench formed in said III-nitride body;   a first buried layer having a first conductivity type formed in said trench over said silicon substrate;   a second buried layer having a second conductivity type opposite said first conductivity type formed over said first buried layer in said trench;   a silicon device formed in said trench over said second buried layer;   a III-nitride device fabricated in said III-nitride body.   
     
     
         35 . The monolithic integrated composite device of  claim 34  wherein said silicon device is formed in a defective region of a silicon body adjacent a sidewall of said trench. 
     
     
         36 . The monolithic integrated composite device of  claim 35 , wherein said silicon body is epitaxially grown. 
     
     
         37 . The monolithic integrated composite device of  claim 34 , wherein said III-nitride body comprises a plurality of III-nitride layers. 
     
     
         38 . The monolithic integrated composite device of  claim 34 , wherein said III-nitride body comprises a heterojunction formed at an interface of a gallium nitride (GaN) layer and an aluminum gallium nitride (AlGaN) layer.