Method for manufacturing semiconductor device

Abstract

According to an embodiment, a method for manufacturing a semiconductor device includes polishing a metal layer provided on a surface of a wafer, while supplying slurry to a polishing pad and spraying gas to the polishing pad. The slurry includes an inorganic particle, a resin particle, an oxidant for oxidizing the metal layer, a complexing agent for forming an organic complex on a surface of the metal layer, and a surfactant for forming a hydrophilic film on a surface of the organic complex. The resin particle includes a functional group on a surface, the functional group having a same kind of polarity as that of the inorganic particle. The resin particle contains polystyrene incorporated at a concentration of 0.001% by weight or more and 0.1% by weight or less, and has an average particle diameter of 200 nm or more and 1 μm or less.

What is claimed is: 
     
         1 . A method for manufacturing a semiconductor device comprising:
 polishing a metal layer provided on a surface of a wafer, while supplying slurry to a polishing pad and spraying gas to the polishing pad, the slurry including:   an inorganic particle;   a resin particle including a functional group on a surface, the functional group having a same kind of polarity as that of the inorganic particle, the resin particle containing polystyrene incorporated at a concentration of 0.001% by weight or more and 0.1% by weight or less, and having an average particle diameter of 200 nm or more and 1 μm or less;   an oxidant for oxidizing the metal layer;   a complexing agent for forming an organic complex on a surface of the metal layer; and   a surfactant for forming a hydrophilic film on a surface of the organic complex.   
     
     
         2 . The method according to  claim 1 , wherein the average particle diameter of the resin particle is larger than an average particle diameter of the inorganic particle. 
     
     
         3 . The method according to  claim 1 , wherein the metal layer contains copper (Cu). 
     
     
         4 . The method according to  claim 3 , wherein the oxidant is ammonium persulfate or a hydrogen peroxide solution. 
     
     
         5 . The method according to  claim 4 , wherein a concentration of the oxidant is 0.1% by weight or more and 5% by weight or less. 
     
     
         6 . The method according to  claim 1 , wherein the gas is air or nitrogen gas. 
     
     
         7 . The method according to  claim 1 , wherein the resin particle includes at least one of a carboxylic group and a sulfonyl group on the surface. 
     
     
         8 . The method according to  claim 1 , wherein the inorganic particle contains at least one selected from the group consisting of colloidal silica, fumed silica, colloidal alumina, fumed alumina, colloidal titania, and fumed titania. 
     
     
         9 . The method according to  claim 1 , wherein the inorganic particle has a primary particle diameter ranging from 10 to 50 nm and a secondary particle diameter ranging from 10 to 100 nm. 
     
     
         10 . The method according to  claim 1 , wherein the complexing agent is at least one selected from the group consisting of quinaldinic acid (quinoline carboxylic acid), quinolinic acid (pyridine-2,3-dicarboxylic acid), benzotriazole (BTA), nicotinic acid (pyridine-3-dicarboxylic acid), picolinic acid, malonic acid, oxalic acid, succinic acid, maleic acid, citric acid, glycine, alanine, and aqueous ammonia. 
     
     
         11 . The method according to  claim 1 , wherein a concentration of the complexing agent is 0.01 to 1% by weight. 
     
     
         12 . The method according to  claim 1 , wherein the surfactant is at least one selected from the group consisting of ammonium dodecylbenzene sulfonate, potassium dodecylbenzene sulfonate, polyvinyl pyrrolidone, polyvinyl alcohol, ammonium polyacrylate, hydroxy cellulose, acetylene diol-based nonion, and polyoxyethylene alkylene ether. 
     
     
         13 . The method according to  claim 1 , wherein a concentration of the surfactant is 0.01% by weight or more and 0.5% by weight or less.