US2014001359A1PendingUtilityA1
Method for inspecting and measuring sample and scanning electron microscope
Est. expirySep 27, 2027(~1.2 yrs left)· nominal 20-yr term from priority
G01N 23/2251H01J 37/28H01J 2237/0048H01J 2237/281H01J 37/26H01J 37/265
58
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Claims
Abstract
As an aspect for realizing accurate observation, inspection, or measurement of the contact hole with large aspect ratio, a method and a device to scan a second electron beam after scanning a first electron beam to a sample to charge the sample are proposed wherein the beam diameter of the first electron beam is made larger than the beam diameter of the second electron beam.
Claims
exact text as granted — not AI-modified1 - 17 . (canceled)
18 . A method for inspecting or measuring a sample, wherein, in a scanning method thereof of an electron beam scanning, after scanning a first electron beam to a sample to charge the sample, a second electron beam is scanned to the charged sample, wherein
a condition is established measuring the charge voltage of the sample by scanning the first electron beam.
19 . The method for inspecting or measuring a sample as set forth in claim 18 , wherein the charge voltage is measured by an energy filter.
20 . The method for inspecting or measuring a sample as set forth in claim 18 , wherein
the charge voltage is measured utilizing reflection of a first electron beam by the relation between energy of the first electron beam and the charge voltage of the sample.
21 . A scanning electron microscope, wherein
in a scanning method thereof of an electron beam scanning, after scanning a first electron beam to a sample to charge the sample, a second electron beam to the charged sample, a database relating the sample and the irradiation condition of the first electron beam is possessed.
22 . The scanning electron microscope as set forth in claim 21 , wherein the database includes the charge voltage generated by irradiation of the first electron beam to the sample.Join the waitlist — get patent alerts
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