Sputtering target and oxide semiconductor film

Abstract

A sputtering target containing oxides of indium (In), gallium (Ga) and zinc (Zn), which includes a compound shown by ZnGa 2 O 4 and a compound shown by InGaZnO 4 .

1 - 13 . (canceled) 
     
     
         14 . A sputtering target comprising a compound shown by InGaZnO 4  as a main component, which further contains a metal element with an atomic valency of positive tetravalency or higher wherein the content of the metal element with an atomic valency of positive tetravalency or higher is 100 ppm to 10000 ppm relative to the total metal elements in the sputtering target. 
     
     
         15 . (canceled) 
     
     
         16 . The sputtering target according to  claim 14 , wherein the content of the metal element with an atomic valency of positive tetravalency or higher is 200 ppm to 5000 ppm relative to the total metal elements in the sputtering target. 
     
     
         17 . The sputtering target according to  claim 14 , wherein the content of the metal element with an atomic valency of positive tetravalency or higher is 500 ppm to 2000 ppm relative to the total metal elements in the sputtering target. 
     
     
         18 . The sputtering target according to  claim 14 , which has a bulk resistance of less than 1×10 −3  Ωcm. 
     
     
         19 . The sputtering target according to  claim 14 , wherein the metal element with an atomic valency of positive tetravalency or higher is at least one element selected from the group consisting of tin, zirconium, germanium, cerium, niobium, tantalum, molybdenum and tungsten. 
     
     
         20 - 23 . (canceled)