Wafer processing method

Abstract

A wafer processing method of processing a wafer having an epitaxial film formed on the front side. The wafer processing method includes a holding step of holding the wafer on a holding table having a holding surface for holding the wafer and a rotational axis extending perpendicularly to the holding surface and passing through the center of the holding surface, and a removing step of pressing a grinding member on a ridge portion formed along the peripheral edge of the wafer held on the holding table and rotating the holding table about the rotational axis, thereby removing the ridge portion.

What is claimed is: 
     
         1 . A wafer processing method of processing a wafer having an epitaxial film formed on a front side, said wafer processing method comprising:
 a holding step of holding said wafer on a holding table having a holding surface for holding said wafer and a rotational axis extending perpendicularly to said holding surface and passing through the center of said holding surface; and   a removing step of pressing a grinding member on a ridge portion formed along the peripheral edge of said wafer held on said holding table and rotating said holding table about said rotational axis, thereby removing said ridge portion.   
     
     
         2 . The wafer processing method according to  claim 1 , wherein said wafer is held on said holding table in the condition where the center of said wafer is deviated from said rotational axis of said holding table in said holding step. 
     
     
         3 . The wafer processing method according to  claim 1 , wherein said wafer is formed of silicon carbide.