Monolithic Group III-V Power Converter

Abstract

A power arrangement that includes a monolithically integrated III-nitride power stage having III-nitride power switches and III-nitride driver switches.

1 - 42 . (canceled) 
     
     
         43 - 55 . (canceled) 
     
     
         56 : A power management arrangement comprising:
 a driver stage including a first III-Nitride transistor and a second III-Nitride transistor;   said driver stage configured to drive a III-Nitride power switch;   said III-Nitride power switch configured to power a load stage;   said load stage including a control circuitry configured to provide control signals to said driver stage.   
     
     
         57 : The power management arrangement of  claim 56  wherein said driver stage including said first III-Nitride transistor and said second III-Nitride transistor, and said III-Nitride power switch are integrated in a single substrate. 
     
     
         58 : The power management arrangement of  claim 56  wherein said second III-Nitride transistor, and said III-Nitride power switch comprise high electron mobility transistors (HEMTs). 
     
     
         59 : The power management arrangement of  claim 56  wherein said first III-Nitride transistor and said second III-Nitride transistor are enhancement mode devices, and said III-Nitride power switch is a depletion mode device. 
     
     
         60 : The power management arrangement of  claim 56  wherein one of said first III-Nitride transistor and said second III-Nitride transistor is an enhancement mode device. 
     
     
         61 : The power management arrangement of  claim 56  wherein one of said first III-Nitride transistor and said second III-Nitride transistor is a depletion mode device. 
     
     
         62 : The power management arrangement of  claim 56  further comprising:
 another III-Nitride power switch; 
 said driver stage including a third III-Nitride transistor and a fourth III-Nitride transistor for driving said another III-Nitride power switch. 
 
     
     
         63 : The power management arrangement of  claim 62  wherein one of said III-Nitride power switch and said another III-Nitride power switch is an enhancement mode device. 
     
     
         64 : The power management arrangement of  claim 62  wherein one of said III-Nitride power switch and said another III-Nitride power switch is a depletion mode device. 
     
     
         65 : A power management arrangement comprising:
 a driver stage including an enhancement mode III-Nitride transistor and a depletion mode III-Nitride transistor;   said driver stage configured to drive a III-Nitride power switch;   said III-Nitride power switch configured to power a load stage;   said load stage including a control circuitry configured to provide control signals to said driver stage.   
     
     
         66 : The power management arrangement of  claim 65  wherein said driver stage including said enhancement mode III-Nitride transistor and said depletion mode III-Nitride transistor, and said III-Nitride power switch are integrated in a single substrate. 
     
     
         67 : The power management arrangement of  claim 65  wherein said enhancement mode III-Nitride transistor, said depletion mode III-Nitride transistor, and said III-Nitride power switch comprise high electron mobility transistors (HEMTs). 
     
     
         68 : The power management arrangement of  claim 65  further comprising:
 another III-Nitride power switch; 
 said driver stage including another enhancement mode III-Nitride transistor and another depletion mode III-Nitride transistor for driving said another III-Nitride power switch. 
 
     
     
         69 : The power management arrangement of  claim 68  wherein one of said III-Nitride power switch and said another III-Nitride power switch is an enhancement mode device. 
     
     
         70 : The power management arrangement of  claim 68  wherein one of said III-Nitride power switch and said another III-Nitride power switch is a depletion mode device. 
     
     
         71 : A power management device comprising:
 a monolithic semiconductor die integrated on a silicon substrate;   said monolithic semiconductor die having a first III-nitride power semiconductor device and a second III-nitride power semiconductor device coupled to said first III-nitride power semiconductor device in a half-bridge configuration;   said half-bridge configuration including a first driver half-bridge arrangement and a second driver half-bridge arrangement.   
     
     
         72 : The power management device of  claim 71 , wherein said first driver half-bridge arrangement comprises an enhancement mode III-nitride switch. 
     
     
         73 : The power management device of  claim 71 , wherein said second driver half-bridge arrangement comprises an enhancement mode III-nitride switch. 
     
     
         74 : The power management device of  claim 71 , wherein said first driver half-bridge arrangement comprises a depletion mode III-nitride switch. 
     
     
         75 : The power management device of  claim 71 , wherein said second driver half-bridge arrangement comprises a depletion mode III-nitride switch.