US2013341775A1PendingUtilityA1

Semiconductor module

50
Assignee: MITSUBISHI ELECTRIC CORPPriority: Jul 4, 2011Filed: Aug 23, 2013Published: Dec 26, 2013
Est. expiryJul 4, 2031(~4.9 yrs left)· nominal 20-yr term from priority
Inventors:Tatsuo OtaToshiaki Shinohara
H10W 90/764H10W 90/763H10W 90/754H10W 90/736H10W 90/734H10W 74/00H10W 72/07653H10W 72/07636H10W 72/07354H10W 72/07336H10W 72/07331H10W 72/5524H10W 72/5522H10W 72/5363H10W 72/884H10W 72/871H10W 72/865H10W 72/652H10W 72/352H10W 72/347H10W 72/325H10W 90/00H10W 76/47H10W 74/121H10W 40/778H10W 40/255H10W 70/465H01L 23/4952
50
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A semiconductor module includes: an insulating plate; a plurality of metal patterns formed on the insulating plate and spaced apart from each other; a power device chip solder-joined on one the metal pattern; a lead frame solder-joined on the metal pattern to which the power device chip is not solder-joined, and on the power device chip; an external main electrode provided to an outer casing, and joined by wire bonding to the lead frame above the metal pattern to which the power device chip is not joined; and a sealing resin formed by potting to seal the power device chip, the lead frame, and the metal patterns.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A semiconductor module, comprising:
 an insulating plate;   a plurality of metal patterns formed on said insulating plate and spaced apart from each other;   a power device chip solder-joined on one of said metal patterns;   a lead frame solder-joined on a metal pattern to which said power device chip is not solder-joined, and on said power device chip;   an external main electrode provided to an outer casing, and joined by wire bonding to said lead frame above said metal pattern to which said power device chip is not joined; and   a sealing resin formed by potting to seal said power device chip, said lead frame, and said metal patterns.   
     
     
         2 . A semiconductor module, comprising:
 an insulating plate;   a metal pattern formed on said insulating plate;   a power device chip and an insulating spacer separately solder-joined on said metal pattern;   a lead frame solder-joined on said power device chip and said insulating spacer;   an external main electrode provided to an outer casing, and joined by wire bonding to said lead frame above said insulating spacer; and   a sealing resin formed by potting to seal said power device chip, said insulating spacer, said lead frame, and said metal pattern.   
     
     
         3 . The semiconductor module according to  claim 1 , wherein said sealing resin is formed by curing a liquid epoxy resin. 
     
     
         4 . The semiconductor module according to  claim 2 , wherein said sealing resin is formed by curing a liquid epoxy resin. 
     
     
         5 . The semiconductor module according to  claim 1 , wherein said power device chip is joined to said metal pattern and said lead frame by silver nanoparticle joining instead of solder joining. 
     
     
         6 . The semiconductor module according to  claim 2 , wherein said power device chip is joined to said metal pattern and said lead frame by silver nanoparticle joining instead of solder joining. 
     
     
         7 . The semiconductor module according to  claim 1 , further comprising a silicone resin for sealing part of the inside of said outer casing, the part sealed with the silicone resin being different from part sealed with said sealing resin formed by potting. 
     
     
         8 . The semiconductor module according to  claim 2 , further comprising a silicone resin for sealing part of the inside of said outer casing, the part sealed with the silicone resin being different from part sealed with said sealing resin formed by potting. 
     
     
         9 . The semiconductor module according to  claim 7 , wherein said sealing resin formed by potting is not provided, and said part to be sealed with said sealing resin is sealed with said silicone resin. 
     
     
         10 . The semiconductor module according to  claim 8 , wherein said sealing resin formed by potting is not provided, and said part to be sealed with said sealing resin is sealed with said silicone resin.

Join the waitlist — get patent alerts

Track US2013341775A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.