US2013337636A1PendingUtilityA1
Carbon doping of gallium arsenide via hydride vapor phase epitaxy
Est. expiryJun 14, 2032(~5.9 yrs left)· nominal 20-yr term from priority
H10P 14/3444H10P 14/24H10P 14/3421C23C 16/301
38
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
Methods for growing layers of carbon doped GaAs are provided. Methods include exposing a substrate to a gas mixture comprising a source of Ga, a source of As and a dopant comprising a haloalkane under conditions sufficient to grow a layer of carbon doped GaAs on the substrate via hydride vapor phase epitaxy. The haloalkane can include a bromoalkane, a bromochloroalkane, an iodoalkane or combinations thereof. The concentration of carbon in the layer can be 1×10 15 cm −3 or greater.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of growing carbon doped GaAs, the method comprising:
exposing a substrate to a gas mixture comprising a source of Ga, a source of As and a dopant comprising a haloalkane under conditions sufficient to grow a layer of carbon doped GaAs on the substrate via hydride vapor phase epitaxy, wherein the haloalkane comprises a bromoalkane, a bromochloroalkane, an iodoalkane or combinations thereof
2 . The method of claim 1 , wherein the haloalkane comprises a bromochloroalkane.
3 . The method of claim 1 , wherein the haloalkane comprises CBrCl 3 , CBr 2 Cl 2 , CBr 3 Cl, CHBrCl 2 , CHBr 2 Cl, CH 2 BrCl or combinations thereof.
4 . The method of claim 1 , wherein the haloalkane comprises CBrCl 3 .
5 . The method of claim 1 , wherein the haloalkane comprises a bromoalkane.
6 . The method of claim 1 , wherein the haloalkane comprises CBr 4 , CHBr 3 , CH 2 Br 2 , CH 3 Br or combinations thereof.
7 . The method of claim 1 , wherein the haloalkane comprises an iodoalkane.
8 . The method of claim 1 , wherein the haloalkane comprises CI 4 , CHI 3 , CH 2 I 2 , CH 3 I or combinations thereof.
9 . The method of claim 1 , wherein the source of As is AsH 3 or As.
10 . The method of claim 1 , wherein the concentration of carbon in the layer is about 1×10 15 cm −3 or greater.
11 . The method of claim 1 , wherein the concentration of carbon in the layer is about 1×10 16 cm −3 or greater.
12 . A method of growing carbon doped GaAs, the method comprising:
exposing a substrate to a gas mixture comprising a source of Ga, a source of As and a dopant comprising a haloalkane under conditions sufficient to grow a layer of carbon doped GaAs on the substrate via hydride vapor phase epitaxy, wherein the concentration of carbon in the layer is about 1×10 15 cm −3 or greater.
13 . The method of claim 12 , wherein the concentration of carbon in the layer is about 1×10 16 cm −3 or greater.
14 . The method of claim 12 , wherein the haloalkane comprises a bromochloroalkane.
15 . The method of claim 12 , wherein the haloalkane comprises CBrCl 3 , CBr 2 Cl 2 , CBr 3 Cl, CHBrCl 2 , CHBr 2 Cl, CH 2 BrCl or combinations thereof.
16 . The method of claim 12 , wherein the haloalkane comprises CBrCl 3 .
17 . The method of claim 12 , wherein the haloalkane comprises a bromoalkane.
18 . The method of claim 12 , wherein the haloalkane comprises CBr 4 , CHBr 3 , CH 2 Br 2 , CH 3 Br or combinations thereof.
19 . The method of claim 12 , wherein the haloalkane comprises an iodoalkane.
20 . The method of claim 12 , wherein the haloalkane comprises CI 4 , CHI 3 , CH 2 I 2 , CH 3 I or combinations thereof.Join the waitlist — get patent alerts
Track US2013337636A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.