Semiconductor device manufacturing method

Abstract

According to one embodiment, a semiconductor device manufacturing method comprises conditioning a polishing pad by pressing a dresser against a surface of the polishing pad while keeping a surface temperature of the polishing pad at 40° C. or higher, and chemically mechanically polishing a polishing target film formed on a semiconductor substrate by pressing a surface of the polishing target film against the surface of the polishing pad having a negative Rsk value.

What is claimed is: 
     
         1 . A semiconductor device manufacturing method comprising:
 conditioning a polishing pad by pressing a dresser against a surface of the polishing pad while keeping a surface temperature of the polishing pad at 40° C. or higher; and   polishing a polishing target film formed on a semiconductor substrate by pressing a surface of the polishing target film against the surface of the polishing pad having a negative Rsk value.   
     
     
         2 . The method of  claim 1 , wherein when conditioning the polishing pad, the surface temperature of the polishing pad is at 80° C. or lower. 
     
     
         3 . The method of  claim 1 , wherein when conditioning the polishing pad, steam is supplied to the surface of the polishing pad. 
     
     
         4 . The method of  claim 3 , wherein when conditioning the polishing pad, the polishing pad is rotated, and the steam is supplied to the surface of the polishing pad on an upstream side of a direction of rotation relative to the dresser. 
     
     
         5 . The method of  claim 1 , wherein when conditioning the polishing pad, a heater comes into contact with the surface of the polishing pad. 
     
     
         6 . The method of  claim 5 , wherein when conditioning the polishing pad, the polishing pad is rotated, and the heater comes into contact with the surface of the polishing pad on an upstream side of a direction of rotation relative to the dresser. 
     
     
         7 . The method of  claim 1 , wherein when conditioning the polishing pad, the dresser is heated. 
     
     
         8 . The method of  claim 1 , wherein the dresser comprises a non-diamond dresser. 
     
     
         9 . The method of  claim 1 , wherein the polishing pad is made of polyurethane. 
     
     
         10 . The method of  claim 1 , wherein a Shore D hardness of the polishing pad is 50 to 80. 
     
     
         11 . The method of  claim 1 , wherein a modulus of elasticity of the polishing pad is 200 to 700 MPa. 
     
     
         12 . A semiconductor device manufacturing method comprising:
 conditioning a polishing pad by pressing a dresser having a positive Rsk value against a surface of the polishing pad; and   polishing a polishing target film formed on a semiconductor substrate by pressing a surface of the polishing target film against the surface of the polishing pad having a negative Rsk value.   
     
     
         13 . The method of  claim 12 , wherein the dresser comprises a metal dresser. 
     
     
         14 . The method of  claim 12 , wherein when conditioning the polishing pad, the polishing pad and the dresser are not rotated. 
     
     
         15 . The method of  claim 12 , wherein the polishing pad is made of polyurethane. 
     
     
         16 . The method of  claim 12 , wherein a Shore D hardness of the polishing pad is 50 to 80. 
     
     
         17 . The method of  claim 12 , wherein a modulus of elasticity of the polishing pad is 200 to 700 MPa.