Manufacturing method of semiconductor integrated circuit device

Abstract

While an adhesive layer is provided over the rear surface of a semiconductor chip in die bonding, a lamination processing (main pressure bonding) is necessary for securing the adhesive state of the adhesive layer after the die bonding process (temporary pressure bonding). Typically the adhesive is hardened by applying heat while pressing down the rear surface of the chip from above with a pressurization member. The lamination processing by such a mechanical pressurization method leads to problems as the chip becomes thinner. The problems include chip damage at a part in an overhang state, a chip position shift caused by bending and non-uniform pressurization, and the like. An aspect of the present technique is to perform the lamination processing by static gas pressure after laminating and temporarily pressure-bonding a plurality of semiconductor chips over a circuit substrate in the die bonding process.

1 - 20 . (canceled) 
     
     
         21 . A manufacturing method of semiconductor integrated circuit device comprising the steps of:
 (a) introducing a circuit substrate having a plurality of device regions over a first principal surface thereof into die bonding equipment;   (b) fixing a plurality of chip laminated bodies each having a semiconductor chip in an upper layer and an adhesive layer on a rear side thereof in each of the device regions so as to laminate the chip laminated bodies in respective positions shifted from one another, in the die bonding equipment; and   (c) after the step (b), applying uniform static gas pressure onto an exposed surface of each of the chip laminated bodies in a state that each of the chip laminated bodies is heated to a first temperature, in the die bonding equipment, wherein   the step (c) is carried out in a state that the uniform static gas pressure in the die bonding equipment is maintained in a predetermined pressurization state by controlling a pressure regulation valve with a pressure sensor.   
     
     
         22 . The manufacturing method of semiconductor integrated circuit device according to  claim 21 , further comprising the step of,
 (d) after the step (b) and before the step (c), applying uniform static gas pressure onto the exposed surface of each of the chip laminated bodies in a state that chip laminated body temperature is in a first temperature range lower than the first temperature, in the die bonding equipment.   
     
     
         23 . The manufacturing method of semiconductor integrated circuit device according to  claim 22 , wherein
 the adhesive layer is DAF.   
     
     
         24 . The manufacturing method of semiconductor integrated circuit device according to  claim 23 , wherein
 the step (c) is carried out in a state that the chip laminated bodies are accommodated in a single sealed chamber.   
     
     
         25 . The manufacturing method of semiconductor integrated circuit device according to  claim 24 , wherein
 the step (d) is carried out in a state that the chip laminated bodies are accommodated in a single sealed chamber.   
     
     
         26 . The manufacturing method of semiconductor integrated circuit device according to  claim 25 , wherein
 the step (d) is carried out in a state that the chip laminated bodies are accommodated in the same sealed chamber as that for the step (c).   
     
     
         27 . The manufacturing method of semiconductor integrated circuit device according to  claim 23 , wherein
 the step (c) is carried out in a state that the chip laminated bodies are accommodated in a single sealed chamber together with the circuit substrate.   
     
     
         28 . The manufacturing method of semiconductor integrated circuit device according to  claim 27 , wherein
 the step (d) is carried out in a state that the chip laminated bodies are accommodated in a single sealed chamber together with the circuit substrate.   
     
     
         29 . The manufacturing method of semiconductor integrated circuit device according to  claim 28 , wherein
 the step (d) is carried out in a state that the chip laminated bodies are accommodated in the same sealed chamber as that for the step (c).   
     
     
         30 . The manufacturing method of semiconductor integrated circuit device according to  claim 27 , wherein
 the chip laminated bodies are laminated in a step-like shape.   
     
     
         31 . The manufacturing method of semiconductor integrated circuit device according to  claim 21 , wherein
 the static gas pressure is static air pressure.   
     
     
         32 . The manufacturing method of semiconductor integrated circuit device according to  claim 21 , wherein
 a thickness in each of the semiconductor chips is 79 micrometers or less and 5 micrometers or more.   
     
     
         33 . The manufacturing method of semiconductor integrated circuit device according to  claim 21 , wherein
 a thickness in each of the semiconductor chips is 50 micrometers or less and 5 micrometers or more.   
     
     
         34 . The manufacturing method of semiconductor integrated circuit device according to  claim 21 , wherein
 a thickness in each of the semiconductor chips is 30 micrometers or less and 5 micrometers or more.   
     
     
         35 . The manufacturing method of semiconductor integrated circuit device according to  claim 21 , wherein
 the circuit substrate is an organic circuit substrate.   
     
     
         36 . The manufacturing method of semiconductor integrated circuit device according to  claim 21 , wherein
 the adhesive layer contains heat-curable resin as a main component.   
     
     
         37 . The manufacturing method of semiconductor integrated circuit device according to  claim 32 , wherein
 the step (b) is carried out in a state that temperature of the semiconductor chip is within the first temperature range.   
     
     
         38 . The manufacturing method of semiconductor integrated circuit device according to  claim 32 , wherein
 the first temperature is from 70 to 160° C.   
     
     
         39 . The manufacturing method of semiconductor integrated circuit device according to  claim 32 , wherein
 the first temperature range is from a room temperature to 100° C.   
     
     
         40 . The manufacturing method of semiconductor integrated circuit device according to claim  42 , wherein
 the first temperature range is from 60 to 100° C.