US2013321954A1PendingUtilityA1
Magnetic structure free layer stabilization
Est. expiryDec 17, 2030(~4.4 yrs left)· nominal 20-yr term from priority
G11B 5/3932G11B 5/147Y10T428/11G11B 5/127
52
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
A magnetic layered structure is presently disclosed comprising a pinned layer, a first anti-ferromagnetic layer that defines a magnetic orientation of the pinned layer, a free layer, a second anti-ferromagnetic layer that biases the free layer to a magnetic orientation approximately perpendicular to the magnetic orientation of the pinned layer, and a tuning layer positioned between and in contact with the second anti-ferromagnetic layer and the free layer that tunes free layer bias to a desired level.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A magnetic layered structure comprising:
a pinned layer; a first anti-ferromagnetic layer that defines a magnetic orientation of the pinned layer; a free layer; a second anti-ferromagnetic layer that biases the free layer to a magnetic orientation approximately perpendicular to the magnetic orientation of the pinned layer; and a tuning layer positioned between and in contact with the second anti-ferromagnetic layer and the free layer, wherein the tuning layer tunes free layer bias to greater than 250 Oresteds (Oe).
2 . The magnetic layered structure of claim 1 , further comprising:
one or more side shields positioned adjacent the free layer along a major plane of the free layer.
3 . The magnetic layered structure of claim 2 , wherein the side shields include a soft magnetic material.
4 . The magnetic layered structure of claim 2 , wherein the side shields include a non-magnetic material.
5 . The magnetic layered structure of claim 1 , further comprising:
two electrodes, each positioned on opposite sides of the layered structure, configured to conduct current through the layered structure along an axis approximately perpendicular to a major plane of the free layer.
6 . The magnetic layered structure of claim 1 , further comprising:
a spacer layer that magnetically separates the pinned layer from the free layer.
7 . The magnetic layered structure of claim 1 , further comprising:
a capping layer that protects the second anti-ferromagnetic layer from post deposition damage.
8 . The magnetic layered structure of claim 1 , wherein the pinned layer, first anti-ferromagnetic layer, free layer, and second anti-ferromagnetic layer comprise a read element sensor.
9 . The magnetic layered structure of claim 1 , wherein approximately perpendicular is perpendicular +/−15 degrees.
10 . The magnetic layered structure of claim 1 , wherein the first and second anti-ferromagnetic layers comprise IrMn or PtMn and have a thickness greater than or equal to 30 Å and less than or equal to 250 Å.
11 . The magnetic layered structure of claim 1 , wherein the tuning layer decouples the free layer and the second anti-ferromagnetic layer while reducing dispersion of a free layer magnetic moment.
12 . The magnetic layered structure of claim 1 , wherein the free layer comprises a first free layer and a second free layer.
13 . A method of biasing a magnetic layered structure, comprising:
defining a magnetic orientation of a pinned layer using a first anti-ferromagnetic layer; biasing a magnetic orientation of a free layer using a second anti-ferromagnetic layer, wherein the defined magnetic orientation of the pinned layer is approximately perpendicular to the biased magnetic orientation of the free layer; and tuning free layer bias to greater than 250 Oe using a tuning layer positioned between and in contact with the second anti-ferromagnetic layer and the free layer.
14 . The method of claim 13 , further comprising:
shielding the free layer from external electromagnetic and/or thermal interference using one or more side shields positioned adjacent the free layer along a major plane of the free layer.
15 . The method of claim 13 , further comprising:
conducting current along an axis approximately perpendicular to a major plane of the free layer between two electrodes positioned on opposite sides of the first anti-ferromagnetic layer, pinned layer, free layer, and second anti-ferromagnetic layer.
16 . The method of claim 13 , further comprising:
decoupling the free layer and the second anti-ferromagnetic layer while reducing dispersion of a free layer magnetic moment.
17 . A transducer for a magnetic disc drive comprising:
a reader, including
a pinned layer;
a first anti-ferromagnetic layer that defines a magnetic orientation of the pinned layer;
a free layer;
a second anti-ferromagnetic layer that biases the free layer to a magnetic orientation approximately perpendicular to the magnetic orientation of the pinned layer; and
a tuning layer positioned between and in direct contact with the second anti-ferromagnetic layer and the free layer, wherein the tuning layer tunes free layer bias to greater than 250 Oe.
18 . The transducer of claim 17 , wherein the reader further includes one or more side shields positioned adjacent the free layer along a major plane of the free layer that shields the free layer from external electromagnetic interference.
19 . The transducer of claim 17 , wherein the reader further includes two electrodes, each positioned on opposite sides of the layered structure, configured to conduct current through the layered structure along an axis approximately perpendicular to a major plane of the free layer.
20 . The transducer of claim 17 , wherein the tuning layer decouples the free layer and the second anti-ferromagnetic layer while reducing dispersion of a free layer magnetic moment.Join the waitlist — get patent alerts
Track US2013321954A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.