Semiconductor device and method for manufacturing the same

Abstract

A semiconductor device and a method for manufacturing the same are disclosed. The method for forming the semiconductor device includes forming one or more buried gates in a semiconductor substrate, forming a landing plug between the buried gates, forming a bit line region exposing the landing plug over the semiconductor substrate, forming a glue layer in the bit line region, forming a bit line material in the bit line region, and removing the glue layer formed at inner sidewalls of the bit line region, and burying an insulation material in a part where the glue layer is removed. A titanium nitride (TiN) film formed at sidewalls of the damascene bit line is removed, so that resistance of the bit line is maintained and parasitic capacitance of the bit line is reduced, resulting in the improvement of device characteristics.

1 . A semiconductor device comprising:
 first and second buried gates;   a landing plug formed between the first and second buried gates; and   a damascene bit line coupled to the landing plug, the damascene bit line including a glue layer formed at a lower surface of the damascene bit line and an insulation layer formed over sidewalls of the damascene bit line.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the insulation layer is disposed on the entire sidewalls of the damascene bit line or an upper portion of the sidewalls of the damascene bit line. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the insulation layer includes an oxide film, a nitride film, or a combination thereof. 
     
     
         4 . The semiconductor device according to  claim 1 , wherein the insulation layer includes an air layer or a vacuum layer. 
     
     
         5 . The semiconductor device according to  claim 1 , wherein the glue layer includes a titanium nitride (TiN) film. 
     
     
         6 . The semiconductor device according to  claim 1 , wherein the damascene bit line includes tungsten. 
     
     
         7 . The semiconductor device according to  claim 1 , further comprising:
 a protection film formed over the damascene bit line.   
     
     
         8 . The semiconductor device according to  claim 7 , wherein the protection film includes a nitride film. 
     
     
         9 .- 20 . (canceled)