Insulating material forming composition for electronic devices, insulating material for electronic devices, electronic devices and thin film transistor

Abstract

A composition for forming an insulating material used in electronic devices which includes, as a polymerizable component, a monomer comprising two or more (meth)acrylic moieties and a polycyclic alicyclic structure.

1 . A composition for forming an insulating material used in electronic devices which comprises, as a polymerizable component, a monomer comprising two or more (meth)acrylic moieties and a polycyclic alicyclic structure. 
     
     
         2 . The composition for forming an insulating material used in electronic devices according to  claim 1 , wherein the polycyclic alicyclic structure is an adamantane skeleton. 
     
     
         3 . The composition for forming an insulating material used in electronic devices according to  claim 1 , wherein the polycyclic alicyclic structure is a tricyclo[5.2.1.0 2,6 ]decane skeleton. 
     
     
         4 . The composition for forming an insulating material used in electronic devices according to  claim 2 , wherein the structure of the monomer is represented by the following formula (I) or (II): 
       
         
           
           
               
               
           
         
       
       wherein R is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group, X is a fluorine atom, a methyl group, a trifluoromethyl group or ═O formed by combination of two Xs; and Y is a methyl group or ═O formed by combination of two Ys; R 1  and R 2  are independently a hydrogen atom, a halogen atom or an alkyl group having 1 to 5 carbon atoms;
 p is an integer of 0 to 6; m is an integer of 0 to 14; n is an integer of 2 or more; t is an integer of 0 to 14; u is an integer of 0 to 14; and s is an integer of 2 or more; and plural Xs and plural Ys may be the same or different from each other; 
 Z 1  is a group represented by —C (q+r) F 2q H 2r — (q is an integer of 0 to 4 and r is an integer of 0 to 4); and Z 2  is a single bond or a group represented by the following formula (II-1) or (II-2): 
 
       
         
           
           
               
               
           
         
       
       wherein R 3  and R 4  are independently a hydrogen atom, a halogen atom or an alkyl group having 1 to 5 carbon atoms; and v is an integer of 1 to 4. 
     
     
         5 . The composition for forming an insulating material used in electronic devices according to  claim 4 , wherein in the formula (I) X is a methyl group, a trifluoromethyl group or ═O formed by combination of two Xs; and R 1  and R 2  are hydrogen atoms;
 in the formula (II) wherein t is an integer of 6 to 14 and u is an integer of 0 to 9; and 
 in the formulas (II-1) and (II-2) wherein R 3  and R 4  are hydrogen atoms. 
 
     
     
         6 . An insulating material used in electronic devices that is a polymer material obtained by curing the composition for forming an insulating material used in electronic devices according to  claim 1 . 
     
     
         7 . An electronic device which uses the insulating material used in electronic devices according to  claim 6  as a planarized film, a passivation film, an interlayer insulating film or a gate insulating film. 
     
     
         8 . A thin film transistor comprising three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and a semiconductor layer in which source-drain current is controlled by applying a voltage to the gate electrode, wherein the insulating material used in electronic devices according to  claim 6  is used in the insulator layer. 
     
     
         9 . The thin film transistor according to  claim 8  wherein the semiconductor layer comprises an organic semiconductor.