Chemical mechanical polishing pad and chemical mechanical polishing method using same

Abstract

A chemical mechanical polishing pad includes a polishing layer that is formed of a composition that includes a polyurethane, the polishing layer having a specific gravity of 1.1 to 1.3 and a thermal conductivity of 0.2 W/m·K or more.

1 . A chemical mechanical polishing pad comprising a polishing layer that is formed of a composition comprising a polyurethane,
 wherein the polishing layer has a specific gravity of from 1.1 to 1.3 and a thermal conductivity of 0.2 W/m·K or more.   
     
     
         2 . The chemical mechanical polishing pad according to  claim 1 , further comprising a laminate which comprises the polishing layer and a support layer that is formed on one side of the polishing layer,
 wherein the laminate has a thermal conductivity of 0.2 W/m·K or more.   
     
     
         3 . The chemical mechanical polishing pad according to  claim 1 ,
 wherein the polishing layer has a residual strain of from 2 to 10% when applying tension to the polishing layer.   
     
     
         4 . The chemical mechanical polishing pad according to  claim 1 ,
 wherein the polishing layer has a volume change ratio of from 0.8 to 5.0% when immersed in water at 23° C. for 24 hours.   
     
     
         5 . The chemical mechanical polishing pad according to  claim 2 ,
 wherein the support layer has a compressibility of 5% or more.   
     
     
         6 . The chemical mechanical polishing pad according to  claim 1 ,
 wherein the polyurethane is a thermoplastic polyurethane.   
     
     
         7 . The chemical mechanical polishing pad according to  claim 1 ,
 wherein the composition further comprises water-soluble particles.   
     
     
         8 . A chemical mechanical polishing method comprising chemically and mechanically polishing a polishing target with the chemical mechanical polishing pad according to  claim 1 . 
     
     
         9 . The chemical mechanical polishing pad according to  claim 2 ,
 wherein the polishing layer has a residual strain of from 2 to 10% when applying tension to the polishing layer.   
     
     
         10 . The chemical mechanical polishing pad according to  claim 2 ,
 wherein the polishing layer has a volume change ratio of from 0.8 to 5.0% when immersed in water at 23° C. for 24 hours.   
     
     
         11 . The chemical mechanical polishing pad according to  claim 3 ,
 wherein the polishing layer has a volume change ratio of from 0.8 to 5.0% when immersed in water at 23° C. for 24 hours.   
     
     
         12 . The chemical mechanical polishing pad according to  claim 2 , wherein the polyurethane is a thermoplastic polyurethane. 
     
     
         13 . The chemical mechanical polishing pad according to  claim 3 , wherein the polyurethane is a thermoplastic polyurethane. 
     
     
         14 . The chemical mechanical polishing pad according to  claim 4 , wherein the polyurethane is a thermoplastic polyurethane. 
     
     
         15 . The chemical mechanical polishing pad according to  claim 5 , wherein the polyurethane is a thermoplastic polyurethane. 
     
     
         16 . The chemical mechanical polishing pad according to  claim 2 , wherein the composition further comprises water-soluble particles. 
     
     
         17 . The chemical mechanical polishing pad according to  claim 3 , wherein the composition further comprises water-soluble particles. 
     
     
         18 . The chemical mechanical polishing pad according to  claim 4 , wherein the composition further comprises water-soluble particles. 
     
     
         19 . The chemical mechanical polishing pad according to  claim 5 , wherein the composition further comprises water-soluble particles. 
     
     
         20 . The chemical mechanical polishing pad according to  claim 6 , wherein the composition further comprises water-soluble particles.