Substrate processing apparatus

Abstract

A method of manufacturing a semiconductor device includes conveying a first substrate provided with an opposing surface having insulator regions and a semiconductor region exposed between the insulator regions and a second substrate provided with an insulator surface exposed toward the opposing surface of the first substrate, into a process chamber in a state that the second substrate is arranged in to face the opposing surface of the first substrate, and selectively forming a silicon-containing film with a flat surface at least on the semiconductor region of the opposing surface of the first substrate by heating an inside of the process chamber and supplying at least a silicon-containing gas and a chlorine-containing gas into the process chamber.

What is claimed is: 
     
         1 . A substrate processing apparatus, comprising:
 a process chamber configured to accommodate and process a first substrate provided with an opposing surface having insulator regions and a semiconductor region exposed between the insulator regions and a second substrate provided with an insulator surface exposed toward the opposing surface of the first substrate;   a first gas supply system configured to supply a silicon-containing gas into the process chamber;   a second gas supply system configured to supply a chlorine-containing gas into the process chamber;   a heater configured to heat the first substrate and the second substrate; and   a controller configured to control the heater, the first gas supply system and the second gas supply system such that the silicon-containing gas and the chlorine-containing gas are supplied between the first substrate and the second substrate, the second substrate arranged to face the opposing surface of the first substrate, to selectively form a silicon-containing film with a flat surface at least on the semiconductor region of the first substrate.