Deposition method using a substrate carrier

Abstract

A deposition method comprises steps as follows. An apparatus for performing a thin-film deposition process is firstly provided, and the apparatus comprises a cabinet, a substrate carrier and a deposition source. The substrate carrier is disposed in the cabinet and comprises a cover element and a supporting element having a through hole. The deposition source is disposed in the cabinet. A substrate is subsequently disposed on the supporting element in order to make a deposition surface of the substrate exposed from the through hole. The cover element is then engaged with the supporting element to secure the substrate therebetween. Next, a deposition vapor is provided from the deposition source to get in touch with the deposition surface.

What is claimed is: 
     
         1 . A deposition method, comprising:
 providing an apparatus, wherein the apparatus comprises:
 a cabinet; 
 a substrate carrier, disposed in the cabinet and comprising a cover element and a supporting element having a through hole; and 
 a deposition source, disposed in the cabinet; 
   disposing a substrate on the supporting element in order to make a deposition surface of the substrate exposed from the through hole;   engaging the cover element with the supporting element to secure the substrate therebetween; and   providing a deposition vapor from the deposition source to get in touch with the deposition surface.   
     
     
         2 . The deposition method according to  claim 1 , wherein the substrate is a wafer and the deposition vapor is a metal source vapor. 
     
     
         3 . The deposition method according to  claim 1 , wherein the step for engaging the cover element with the supporting element comprises steps of defining a space substantially airtight between the cover element, the supporting element and the substrate. 
     
     
         4 . The deposition method according to  claim 3 , wherein the deposition surface is a backside surface of a wafer, and the space is defined by the supporting element, the cover element and an active surface of the wafer. 
     
     
         5 . The deposition method according to  claim 1 , wherein the step of providing the apparatus further comprises:
 configuring a base of the supporting element, the base having the through hole penetrating therethrough; and   configuring a first annular flange of the supporting element, the first annular flange vertically protruding from a top surface of the base and surrounding the through hole.   
     
     
         6 . The deposition method according to  claim 5 , wherein the step of providing the apparatus further comprises:
 configuring a shield plate of the cover element and a second annular flange of the cover element, the second annular flange protruding from the shielding plate; and   configuring a protruding length of the second annular flange extending from the shielding plate substantially greater than a protruding length of the first annular flange extending from the base;   wherein the step of engaging the cover element with the supporting element to secure the substrate therebetween further comprises getting the second annular flange in touch with a portion of the base beyond the outer edge of the first annular flange.